Microchip Technology_TN2510N8-G
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Microchip Technology
TN2510N8-G

278-TN2510N8-G
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MOSFET N-CH 100V 730MA TO243AA
4 Weeks

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Tech Specifications

Configuration
Single Dual Drain
Typical Turn-Off Delay Time (ns)
20(Max)
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 25 V
Typical Rise Time (ns)
10(Max)
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
10(Max)
Product Status
Active
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TN2510N8-G Description

TN2510N8-G Description

The TN2510N8-G is a high-performance MOSFET (Metal Oxide) from Microchip Technology, designed for single FET applications. This N-Channel device offers a unique combination of technical specifications and performance benefits, making it an ideal choice for various electronic systems. With an active product status, the TN2510N8-G is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring compliance with global environmental and trade regulations.

TN2510N8-G Features

  • Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V, ensuring fast switching and minimal capacitive loading on the gate drive.
  • Drain to Source Voltage (Vdss): 100 V, providing robust voltage handling capabilities.
  • Power Dissipation (Max): 1.6W (Ta), enabling efficient power management in various applications.
  • Vgs (Max): ±20V, offering a wide gate voltage range for flexible operation.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring reliable performance in diverse environmental conditions.
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V, delivering low on-resistance for efficient power dissipation.
  • Vgs(th) (Max) @ Id: 2V @ 1mA, providing a low threshold voltage for easy gate drive.
  • Current - Continuous Drain (Id) @ 25°C: 730mA (Tj), ensuring high current handling capabilities.
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, allowing for flexible gate drive options.
  • Mounting Type: Surface Mount, facilitating easy integration into PCB designs.
  • Package: Tape & Reel (TR), providing convenient packaging for high-volume manufacturing.

TN2510N8-G Applications

The TN2510N8-G is ideal for a wide range of applications, including:

  1. Power Management: Its high voltage and current handling capabilities make it suitable for power management circuits in consumer electronics, industrial equipment, and automotive systems.
  2. Motor Control: The low on-resistance and high current handling capabilities of the TN2510N8-G make it an excellent choice for motor control applications, such as in HVAC systems, robotics, and industrial automation.
  3. Audio Amplifiers: The TN2510N8-G's fast switching and low capacitive loading on the gate drive make it ideal for audio amplifier circuits, ensuring high-fidelity audio reproduction.
  4. LED Lighting: The device's high voltage and current handling capabilities, combined with its low on-resistance, make it suitable for LED lighting applications, such as in automotive headlights, streetlights, and indoor lighting systems.

Conclusion of TN2510N8-G

The TN2510N8-G from Microchip Technology is a versatile and high-performance MOSFET, offering a unique combination of technical specifications and performance benefits. Its wide range of applications, from power management to motor control, makes it an ideal choice for engineers looking to optimize their electronic systems. With its robust performance and compliance with global environmental and trade regulations, the TN2510N8-G is a reliable and efficient solution for a variety of electronic design challenges.

FAQ

What operating temperature range does TN2510N8-G support?
TN2510N8-G has an operating temperature range of -55°C ~ 150°C (TJ).
Are there related or alternative parts for TN2510N8-G?
What is TN2510N8-G?
What is the mounting type of TN2510N8-G?
What voltage specification is listed for TN2510N8-G?
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