Microchip Technology_TP2104K1-G

Microchip Technology
TP2104K1-G  
Single FETs, MOSFETs

TP2104K1-G
278-TP2104K1-G
Ersa
Microchip Technology-TP2104K1-G-datasheets-7681396.pdf
MOSFET P-CH 40V 160MA TO236AB
In Stock : 2345

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TP2104K1-G Description

TP2104K1-G Description

The TP2104K1-G is a high-performance MOSFET (Metal Oxide) device manufactured by Microchip Technology, designed for a wide range of applications in the electronics industry. This Single FET offers excellent electrical characteristics and is compliant with various environmental and regulatory standards.

TP2104K1-G Features

  • Input Capacitance (Ciss): The TP2104K1-G boasts a maximum input capacitance of 60 pF at 25 V, ensuring fast switching and minimal power loss.
  • Drain to Source Voltage (Vdss): With a Vdss rating of 40 V, this MOSFET can handle high voltage applications with ease.
  • Power Dissipation: The device has a maximum power dissipation of 360mW at ambient temperature, making it suitable for various power management tasks.
  • Technology: Utilizing advanced MOSFET technology, the TP2104K1-G delivers superior performance and reliability.
  • REACH Status: The TP2104K1-G is REACH Unaffected, ensuring compliance with European Union regulations concerning the safe use of chemicals.
  • RoHS Status: This device is ROHS3 Compliant, adhering to the European Union's directive on the restriction of hazardous substances in electronic products.
  • Moisture Sensitivity Level (MSL): With an MSL of 1 (Unlimited), the TP2104K1-G can be stored without concerns about moisture-related degradation.
  • Mounting Type: The device is designed for surface mount applications, facilitating easy integration into various electronic systems.
  • Rds On (Max): The TP2104K1-G offers a maximum Rds On of 6 Ohms at 500mA and 10V, ensuring low on-resistance and high efficiency.
  • Vgs(th) (Max): The device has a maximum threshold voltage of 2V at 1mA, providing precise control over the gate voltage.

TP2104K1-G Applications

The TP2104K1-G is ideal for a variety of applications due to its high voltage and power handling capabilities, as well as its low on-resistance. Some specific use cases include:

  • Power Management Systems: The high Vdss rating makes it suitable for managing power in various electronic devices.
  • Automotive Electronics: The device's ability to handle high voltages and power dissipation makes it ideal for automotive applications.
  • Industrial Controls: The TP2104K1-G can be used in industrial control systems where high voltage and power management are critical.
  • Telecommunications: This MOSFET can be utilized in telecommunications equipment where high reliability and performance are essential.

Conclusion of TP2104K1-G

The TP2104K1-G from Microchip Technology is a robust and reliable MOSFET designed for high voltage and power applications. Its unique features, such as low on-resistance, high power dissipation, and compliance with environmental and regulatory standards, make it an excellent choice for a wide range of applications in the electronics industry. With its superior performance and versatility, the TP2104K1-G stands out as a top choice for engineers and designers looking for a dependable MOSFET solution.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Series
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Moisture Sensitive
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

TP2104K1-G Documents

Download datasheets and manufacturer documentation for TP2104K1-G

Ersa Qualification Supertex Devices 22/Jul/2014      
Ersa TP2104      
Ersa Packing Changes 10/Oct/2016       Label and Packing Changes 23/Sep/2015      
Ersa TP2104 07/Apr/2020       Die Attach Material Update 22/Jun/2015      
Ersa Microchip CA Prop65       Microchip RoHS       Microchip REACH      

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