Microchip Technology_TP2104K1-G
original

Microchip Technology
TP2104K1-G

278-TP2104K1-G
PDF Datasheet
MOSFET P-CH 40V 160MA TO236AB
5 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
5
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
Typical Rise Time (ns)
4
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
4
Product Status
Active
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TP2104K1-G Description

TP2104K1-G Description

The TP2104K1-G is a high-performance MOSFET (Metal Oxide) device manufactured by Microchip Technology, designed for a wide range of applications in the electronics industry. This Single FET offers excellent electrical characteristics and is compliant with various environmental and regulatory standards.

TP2104K1-G Features

  • Input Capacitance (Ciss): The TP2104K1-G boasts a maximum input capacitance of 60 pF at 25 V, ensuring fast switching and minimal power loss.
  • Drain to Source Voltage (Vdss): With a Vdss rating of 40 V, this MOSFET can handle high voltage applications with ease.
  • Power Dissipation: The device has a maximum power dissipation of 360mW at ambient temperature, making it suitable for various power management tasks.
  • Technology: Utilizing advanced MOSFET technology, the TP2104K1-G delivers superior performance and reliability.
  • REACH Status: The TP2104K1-G is REACH Unaffected, ensuring compliance with European Union regulations concerning the safe use of chemicals.
  • RoHS Status: This device is ROHS3 Compliant, adhering to the European Union's directive on the restriction of hazardous substances in electronic products.
  • Moisture Sensitivity Level (MSL): With an MSL of 1 (Unlimited), the TP2104K1-G can be stored without concerns about moisture-related degradation.
  • Mounting Type: The device is designed for surface mount applications, facilitating easy integration into various electronic systems.
  • Rds On (Max): The TP2104K1-G offers a maximum Rds On of 6 Ohms at 500mA and 10V, ensuring low on-resistance and high efficiency.
  • Vgs(th) (Max): The device has a maximum threshold voltage of 2V at 1mA, providing precise control over the gate voltage.

TP2104K1-G Applications

The TP2104K1-G is ideal for a variety of applications due to its high voltage and power handling capabilities, as well as its low on-resistance. Some specific use cases include:

  • Power Management Systems: The high Vdss rating makes it suitable for managing power in various electronic devices.
  • Automotive Electronics: The device's ability to handle high voltages and power dissipation makes it ideal for automotive applications.
  • Industrial Controls: The TP2104K1-G can be used in industrial control systems where high voltage and power management are critical.
  • Telecommunications: This MOSFET can be utilized in telecommunications equipment where high reliability and performance are essential.

Conclusion of TP2104K1-G

The TP2104K1-G from Microchip Technology is a robust and reliable MOSFET designed for high voltage and power applications. Its unique features, such as low on-resistance, high power dissipation, and compliance with environmental and regulatory standards, make it an excellent choice for a wide range of applications in the electronics industry. With its superior performance and versatility, the TP2104K1-G stands out as a top choice for engineers and designers looking for a dependable MOSFET solution.

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