Microchip Technology_TP2510N8-G
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Microchip Technology
TP2510N8-G

278-TP2510N8-G
PDF Datasheet
MOSFET P-CH 100V 480MA TO243AA
6 Weeks

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Tech Specifications

Configuration
Single Dual Drain
Typical Turn-Off Delay Time (ns)
20(Max)
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 25 V
Typical Rise Time (ns)
15(Max)
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
10(Max)
Product Status
Active
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TP2510N8-G Description

TP2510N8-G Description

The TP2510N8-G is a high-performance MOSFET (Metal Oxide) manufactured by Microchip Technology. It is a single P-Channel FET with a drain-to-source voltage (Vdss) of 100V, making it suitable for high-voltage applications. The device is currently active and compliant with the REACH and RoHS3 standards, ensuring environmental safety and regulatory compliance. With a moisture sensitivity level (MSL) of 1, it is suitable for a wide range of applications without the need for special handling or storage conditions.

TP2510N8-G Features

  • Input Capacitance (Ciss): The TP2510N8-G has a maximum input capacitance of 125 pF at 25V, ensuring fast switching and low power consumption.
  • Power Dissipation: It can handle a maximum power dissipation of 1.6W at ambient temperature, making it suitable for power electronics applications.
  • Gate Voltage (Vgs): The device supports a maximum gate voltage of ±20V, providing flexibility in gate drive requirements.
  • Rds On (Max): The maximum on-resistance (Rds On) is 3.5 Ohms at an ID of 750mA and Vgs of 10V, ensuring low conduction losses.
  • Vgs(th) (Max): The maximum threshold voltage (Vgs(th)) is 2.4V at an ID of 1mA, ensuring reliable device operation.
  • Current - Continuous Drain (Id): The device can handle a continuous drain current of 480mA at 25°C, making it suitable for applications requiring high current handling.
  • Drive Voltage: The maximum drive voltage is 10V, ensuring compatibility with various gate drive circuits.
  • Mounting Type: The device is surface-mount, making it suitable for compact and high-density PCB layouts.

TP2510N8-G Applications

The TP2510N8-G is ideal for a variety of applications due to its high-voltage and high-current handling capabilities. Some specific use cases include:

  1. Power Electronics: The device's high Vdss and Id ratings make it suitable for power electronics applications such as motor control, power supplies, and inverters.
  2. Automotive Electronics: The TP2510N8-G can be used in automotive electronics for applications such as window lifts, power mirrors, and HVAC systems.
  3. Industrial Control: The device's robust performance characteristics make it suitable for industrial control applications such as motor drives and process control systems.

Conclusion of TP2510N8-G

The TP2510N8-G is a versatile and high-performance MOSFET that offers excellent technical specifications and performance benefits. Its high-voltage and high-current handling capabilities, along with its compliance with environmental and regulatory standards, make it an ideal choice for a wide range of applications in power electronics, automotive electronics, and industrial control. With its unique features and advantages over similar models, the TP2510N8-G is a reliable and efficient solution for demanding applications.

FAQ

What is TP2510N8-G?
TP2510N8-G is a Single FETs, MOSFETs from Microchip Technology. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the standard lead time for TP2510N8-G?
Are there related or alternative parts for TP2510N8-G?
What voltage specification is listed for TP2510N8-G?
What is the mounting type of TP2510N8-G?
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