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Micron Technology
MT46H8M16LFCF-75
774-MT46H8M16LFCF-75
PDF Datasheet
IC DRAM 128MBIT PAR 60VFBGA
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Tech Specifications
Mfr
Micron Technology Inc.
Series
-
Packaging
Tray
Part Status
Obsolete
Memory Type
Volatile
Memory Format
DRAM
Technology
SDRAM - Mobile LPDDR
Memory Size
128Mbit
MT46H8M16LFCF-75 Description
Micron Technology ● Mobile LPDDR SDRAM ✓ Obsolete • Industrial Temp
■
LPDDR · 128 Mb
60‑VFBGA (8×10 mm)
RoHS Halogen‑Free JEDEC EOL
Mobile Low‑Power DDR SDRAM
MT46H8M16LFCF‑75
★ Industrial / Commercial • 8M × 16 • 133 MHz • –40°C to +85°C
128 Mb Mobile LPDDR SDRAM organized as 8M × 16, operating at 1.8 V with a peak clock frequency of 133 MHz and 6 ns access time. Features a double‑data‑rate (DDR) architecture, four internal banks, and low‑power modes including auto refresh, self refresh, and partial‑array self refresh (PASR). Qualified for industrial temperature range (–40°C to +85°C) – ideal for mobile, automotive, and portable embedded applications.
Note: This part is End‑of‑Life (EOL) / Obsolete.
Memory Density
128 Mb (16 MB)
128 Mb (16 MB)
Organization
8M × 16
8M × 16
Max Clock Frequency
133 MHz
133 MHz
Access Time
6 ns
6 ns
Voltage (VDD / VDDQ)
1.8 V ± 0.1 V
1.8 V ± 0.1 V
Supply Voltage Range
1.7 V – 1.9 V
1.7 V – 1.9 V
Package
60‑VFBGA (8×10 mm)
60‑VFBGA (8×10 mm)
Data Bus Width
16 bit
16 bit
Internal Banks
4 banks
4 banks
Burst Lengths
2, 4, 8
2, 4, 8
Refresh Count
4096 cycles
4096 cycles
Operating Temperature
–40 °C to +85 °C (Industrial)
–40 °C to +85 °C (Industrial)
Interface
Parallel
Parallel
Product Status
Obsolete (EOL)
Obsolete (EOL)
Technical Highlights
- Mobile DDR Architecture: Internal, pipelined double‑data‑rate (DDR) architecture delivers two data accesses per clock cycle for high bandwidth.
- Low‑Power Features: Auto refresh, self refresh, and partial‑array self refresh (PASR) modes with an on‑chip temperature sensor to control refresh rate.
- Flexible Programmability: Programmable burst lengths (2, 4, or 8), concurrent auto precharge, and selectable output drive (DS) for system optimisation.
- Signal Integrity: Bidirectional data strobe (DQS) per byte, differential clock inputs (CK and CK#), and 1.8 V LVCMOS‑compatible inputs.
- Industrial Temperature Range: –40°C to +85°C operation ensures reliability in harsh environments, including automotive and outdoor applications.
- Green Package: RoHS‑compliant, halogen‑free, and Pb‑free 60‑ball VFBGA (8×10 mm) package.
🚀 Key Applications
- Mobile Phones & Handheld Devices
- Automotive Infotainment & Clusters
- Portable Medical Equipment
- Industrial Handheld Terminals
- GPS Navigation Systems
⚡ Key Benefits
- Low power consumption for battery‑operated devices
- High bandwidth with DDR architecture
- Industrial temperature range for harsh environments
- Compact 8×10 mm VFBGA footprint
- Green package (Pb‑free, halogen‑free)
Selection / Replacement Notes
- Must match: Density (128 Mb), organization (8M × 16), voltage (1.8 V), and interface (Parallel) are critical. Temperature range (–40 to +85°C) must be verified for industrial applications.
- Flexible: Burst lengths (2, 4, 8) and output drive strength are programmable via mode registers; some timing parameters may be adjusted to suit your controller.
- Suffix / package: "IT" denotes industrial temperature (–40 to +85°C); "TR" indicates tape‑and‑reel packaging. Package is 60‑VFBGA (8×10 mm) – ensure ball‑out compatibility with your PCB.
- Compatibility: This is a Mobile LPDDR SDRAM; verify that your memory controller supports 1.8 V I/O and LPDDR timing. This part is Obsolete (EOL); for new designs, consider LPDDR2 or LPDDR3 alternatives.
Alternative Models
| Model | Key Difference |
|---|---|
| MT46H8M16LFCF-75 IT | Industrial temperature (–40 to +85°C) – extended range |
| MT46H8M16LFCF-75 TR | Tape & Reel packaging variant |
| MT46H8M16LFCF-10 | 100 MHz speed – slower performance |
| MT46H16M16LFCF-75 | Double density (256 Mb) – higher capacity |
Always verify pinout, voltage, and timing with the official manufacturer datasheet before substitution.
■ Packaging: Tray & Tape/Reel ■ MSL: Level 3 (260°C) ■ Moisture Sensitivity: 168 hours
● Obsolete – Limited Stock✓ 100% Original Micron Silicon ✓ Halogen-free / RoHS 2015/863 ✓ Full traceability & Certificate of Conformance ✓ ECCN: EAR99
© 2026 Micron Technology, Inc. • MT46H8M16LFCF-75 • Preliminary specifications – subject to change without notice.
All data based on typical conditions. For latest information, consult the official Micron datasheet.
All data based on typical conditions. For latest information, consult the official Micron datasheet.
FAQ
What type of memory is the MT46H8M16LFCF-75, and what are its key specifications?
The MT46H8M16LFCF-75 is a 128Mb (128 Megabit) Mobile LPDDR SDRAM from Micron Technology. It is a high-speed CMOS, dynamic random-access memory internally configured as a quad-bank DRAM.
Its key specifications are:
Parameter Detail
Memory Type Mobile LPDDR SDRAM
Density 128 Mbit (16 MB)
Organization 8M x 16 bits (2 Meg x 16 x 4 banks)
Data Bus Width 16-bit
Package 60-ball VFBGA (8x10 mm)
Max Clock Frequency 133 MHz
Access Time 6 ns
Write Cycle Time 15 ns
Supply Voltage 1.7V – 1.9V
I/O Voltage 1.8V (1.7V – 1.95V)
What are the operating voltage and temperature range for this device?
What are the typical applications and key features of this device?
What are the packaging options and part status?
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