Micron Technology_MT53E256M32D2DS-046 IT:B

Micron Technology
MT53E256M32D2DS-046 IT:B  
Memory ICs Products

Micron Technology
MT53E256M32D2DS-046 IT:B
774-MT53E256M32D2DS-046 IT:B
IC DRAM 8GBIT 2.133GHZ 200WFBGA
In Stock : 651

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MT53E256M32D2DS-046 IT:B Description

MT53E256M32D2DS-046 IT:B Description

The MT53E256M32D2DS-046 IT:B is an integrated circuit (IC) DRAM module designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This 8Gbit memory device is organized as 256M x 32 and operates at a clock frequency of 2.133 GHz, ensuring high-speed data processing and efficient memory management. The module is packaged in a 200-ball fine-pitch ball grid array (200WFBGA) and is designed for surface-mount applications, making it suitable for compact and high-density electronic systems. Despite its obsolescence, the MT53E256M32D2DS-046 IT:B remains a reliable choice for applications requiring robust memory performance.

MT53E256M32D2DS-046 IT:B Features

  • Memory Organization: The MT53E256M32D2DS-046 IT:B features a 256M x 32 memory organization, providing a total memory size of 8Gbit. This configuration ensures efficient data storage and retrieval, making it ideal for applications requiring large data sets.
  • Clock Frequency: Operating at 2.133 GHz, this DRAM module delivers high-speed performance, enabling rapid data processing and reduced latency. This high clock frequency is crucial for applications that demand quick access to memory.
  • Volatile Memory: As a volatile memory type, the MT53E256M32D2DS-046 IT:B retains data only while power is supplied. This characteristic is beneficial for applications where data is frequently updated and temporary storage is required.
  • Supply Voltage: The module operates at a supply voltage of 1.1V, ensuring low power consumption and compatibility with modern, energy-efficient systems.
  • Surface Mount Technology: The surface-mount mounting type allows for easy integration into compact and high-density electronic designs, enhancing the overall system performance and reliability.
  • Moisture Sensitivity Level: With a moisture sensitivity level (MSL) of 3 (168 hours), the MT53E256M32D2DS-046 IT:B is designed to withstand moderate levels of humidity, making it suitable for a variety of environmental conditions.
  • Compliance: The module is REACH unaffected and ROHS3 compliant, ensuring it meets the latest environmental and safety standards. It is also classified under ECCN EAR99 and HTSUS 8542.32.0036, facilitating international trade and regulatory compliance.

MT53E256M32D2DS-046 IT:B Applications

The MT53E256M32D2DS-046 IT:B is ideal for a range of applications that require high-speed, high-density memory solutions. Some specific use cases include:

  • High-Performance Computing: The high clock frequency and large memory size make it suitable for systems that require rapid data processing, such as servers and workstations.
  • Networking Equipment: The module's high-speed performance and compact design are beneficial for networking devices that need to handle large volumes of data quickly and efficiently.
  • Telecommunications: In telecommunications infrastructure, the MT53E256M32D2DS-046 IT:B can be used to manage data traffic and ensure smooth communication operations.
  • Consumer Electronics: For consumer electronics that require significant memory capacity and fast data access, such as gaming consoles and high-end multimedia devices, this DRAM module provides reliable performance.

Conclusion of MT53E256M32D2DS-046 IT:B

The MT53E256M32D2DS-046 IT:B, despite being obsolete, remains a robust and reliable DRAM module suitable for applications requiring high-speed, high-density memory solutions. Its 8Gbit memory size, 2.133 GHz clock frequency, and surface-mount design make it an excellent choice for a variety of electronic systems. The module's compliance with environmental and safety standards ensures it meets the requirements of modern electronics manufacturing. For applications that demand efficient memory management and high performance, the MT53E256M32D2DS-046 IT:B is a proven and effective solution.

Tech Specifications

Clock Frequency
Operating Temperature
Memory Interface
ECCN
Memory Organization
Mounting Type
Memory Type
Product Status
Supplier Device Package
Series
Write Cycle Time - Word, Page
Memory Size
Package / Case
Technology
Voltage - Supply
REACH Status
Mfr
HTSUS
Package
Memory Format
RoHS Status
Base Product Number
Moisture Sensitivity Level (MSL)
Mounting Style
Organization
Data Bus Width
RoHS
Minimum Operating Temperature
Type
Moisture Sensitive
Maximum Clock Frequency
Maximum Operating Temperature
Supply Voltage - Max
USHTS

MT53E256M32D2DS-046 IT:B Documents

Download datasheets and manufacturer documentation for MT53E256M32D2DS-046 IT:B

Ersa Tray Pkg Label Chgs 8/Oct/2020      
Ersa MT53E256M16D1, MT53E256M32D2      
Ersa Memory 24-May-2022       Tray 05-May-2022      
Ersa Micron FBGA and Component Marking Decoder      

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