Micron Technology_MT53E256M32D2DS-053 AAT:B
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Micron Technology
MT53E256M32D2DS-053 AAT:B

774-MT53E256M32D2DS-053 AAT:B
PDF Datasheet
IC DRAM 8GBIT 1.866GHZ 200WFBGA

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Tech Specifications

Clock Frequency
1.866 GHz
Unit Weight
0.169812 oz
Part Status Code
Contact Sales
Component Density
8Gb
Number of Components
2
Memory Type
Volatile
Product Status
Last Time Buy
RoHS
RoHS Compliant
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MT53E256M32D2DS-053 AAT:B Description

MT53E256M32D2DS-053 AAT:B Description

The MT53E256M32D2DS-053 AAT:B is a high-performance, 8Gbit DRAM memory IC designed by Micron Technology Inc. This device is engineered to meet the stringent requirements of the automotive industry, ensuring robustness and reliability in demanding environments. The memory is organized as 256M x 32, offering a substantial capacity for data storage and processing. With a clock frequency of 1.866 GHz, it delivers rapid data access speeds, making it suitable for applications requiring high bandwidth and low latency.

The MT53E256M32D2DS-053 AAT:B is packaged in a 200-ball fine-pitch BGA (200WFBGA) format, which is ideal for surface mount applications. This packaging ensures a compact footprint and efficient thermal performance, crucial for integration into modern automotive electronic systems. The device operates at a supply voltage of 1.1V, contributing to energy efficiency and reduced power consumption.

MT53E256M32D2DS-053 AAT:B Features

  • High Capacity and Bandwidth: With an 8Gbit memory size and a clock frequency of 1.866 GHz, this DRAM IC provides significant capacity and high-speed data access, essential for advanced automotive systems.
  • Automotive Grade: Certified for automotive use, ensuring reliability and performance in harsh operating conditions.
  • Surface Mount Technology: The 200WFBGA package is optimized for surface mount applications, offering a compact and efficient solution.
  • Low Power Consumption: Operates at 1.1V, contributing to energy efficiency and reduced power requirements.
  • Compliance and Safety: REACH unaffected and RoHS3 compliant, ensuring environmental and safety standards are met.
  • Moisture Sensitivity Level: MSL 3 (168 Hours), suitable for manufacturing processes that require protection against moisture.
  • Global Trade Compliance: ECCN classification as EAR99 and HTSUS code 8542.32.0036, facilitating international trade and regulatory compliance.

MT53E256M32D2DS-053 AAT:B Applications

The MT53E256M32D2DS-053 AAT:B is ideally suited for a range of automotive applications, including:

  • Advanced Driver Assistance Systems (ADAS): Provides the necessary memory capacity and speed for real-time processing of sensor data.
  • Infotainment Systems: Supports high-resolution graphics and multimedia processing, enhancing user experience.
  • Telematics and Connectivity: Ensures reliable data storage and retrieval for vehicle-to-vehicle and vehicle-to-infrastructure communications.
  • Electronic Control Units (ECUs): Facilitates efficient data handling for critical vehicle control systems.

Conclusion of MT53E256M32D2DS-053 AAT:B

The MT53E256M32D2DS-053 AAT:B from Micron Technology Inc. stands out as a high-performance, automotive-grade DRAM IC. Its combination of high memory capacity, fast clock frequency, and low power consumption makes it an ideal choice for modern automotive systems. The device's compliance with industry standards and its robust packaging ensure reliability and ease of integration. As the automotive industry continues to evolve, the MT53E256M32D2DS-053 AAT:B is well-positioned to support the increasing demands for advanced electronic systems.

FAQ

Does MT53E256M32D2DS-053 AAT:B have quantity-based pricing?
Yes. MT53E256M32D2DS-053 AAT:B currently has 2 pricing tier(s), starting from 1 units.
What operating temperature range does MT53E256M32D2DS-053 AAT:B support?
Is MT53E256M32D2DS-053 AAT:B currently in stock?
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