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Microsemi
APTM100A12STG
289-APTM100A12STG
PDF Datasheet
Power Field-Effect Transistor, 68A I(D), 1000V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-9
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Tech Specifications
Continuous Drain Current (ID)
68A
Drain to Source Voltage (Vdss)
1kV
FET Type
2 N-Channel
Input Capacitance
17.4nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
1.25kW
Mount
Chassis Mount
APTM100A12STG Description
Mosfet Array 1000V (1kV) 68A 1250W Chassis Mount SP3
FAQ
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