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Microsemi
APTM100A23SCTG
289-APTM100A23SCTG
PDF Datasheet
Power Field-Effect Transistor, 36A I(D), 1000V, 0.23ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Tech Specifications
Continuous Drain Current (ID)
36A
Drain to Source Voltage (Vdss)
1kV
FET Type
2 N-Channel
Input Capacitance
8.7nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
694W
Mount
Chassis Mount
APTM100A23SCTG Description
Mosfet Array 1000V (1kV) 36A 694W Chassis Mount SP4
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