Microsemi_APTM120TDU57PG
original

Microsemi
APTM120TDU57PG

289-APTM120TDU57PG
PDF Datasheet
Power Field-Effect Transistor, 17A I(D), 1200V, 0.57ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-21

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
Module
Continuous Drain Current (ID)
17A
Drain to Source Voltage (Vdss)
1.2kV
Fall Time
45ns
FET Type
6 N-Channel
Gate to Source Voltage (Vgs)
30V
Input Capacitance
5.155nF
Max Operating Temperature
150°C
Show More

APTM120TDU57PG Description

Mosfet Array 1200V (1.2kV) 17A 390W Chassis Mount SP6-P

FAQ

What package or case is APTM120TDU57PG available in?
APTM120TDU57PG is available in the Module package / case.
What is APTM120TDU57PG?
What operating temperature range does APTM120TDU57PG support?
Are there related or alternative parts for APTM120TDU57PG?
What is the mounting type of APTM120TDU57PG?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ