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Microsemi
APTM120A80FT1G
289-APTM120A80FT1G
PDF Datasheet
Power Field-Effect Transistor, 14A I(D), 1200V, 0.96ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP1, 12 PIN
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Tech Specifications
Continuous Drain Current (ID)
14A
Drain to Source Voltage (Vdss)
1.2kV
FET Type
2 N-Channel
Input Capacitance
6.696nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
357W
Mount
Chassis Mount
APTM120A80FT1G Description
Mosfet Array 1200V (1.2kV) 14A 357W Chassis Mount SP1
FAQ
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