Microsemi_JAN2N3811U
Microsemi_JAN2N3811U
original

Microsemi
JAN2N3811U

277-JAN2N3811U
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78

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Tech Specifications

Package/Case
TO-78-6
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector-emitter Voltage-Max
250mV
Max Collector Current
50mA
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
350mW
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JAN2N3811U Description

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

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JAN2N3811U is available in the TO-78-6 package / case.
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