onsemi_MJD31C1G
original

onsemi
MJD31C1G

276-MJD31C1G
PDF Datasheet
100V 3A NPN BJT Power Transistor, DPAK, SMD

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Tech Specifications

Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
10V
Collector Emitter Saturation Voltage
1.2V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.2V
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
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MJD31C1G Description

Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Through Hole IPAK

FAQ

What is MJD31C1G?
MJD31C1G is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
Are there related or alternative parts for MJD31C1G?
What voltage specification is listed for MJD31C1G?
What operating temperature range does MJD31C1G support?
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