NXP Semiconductors_BFU730LXZ
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NXP Semiconductors
BFU730LXZ

283-BFU730LXZ
PDF Datasheet
RF TRANS NPN 3V 53GHZ 3DFN1006
13 Weeks

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Tech Specifications

Configuration
Single
Maximum Power 1dB Compression (dBm)
11.7(Typ)
Typical Power Gain (dB)
24.5
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
3V
Automotive
No
Maximum 3rd Order Intercept Point (dBm)
25.5(Typ)
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BFU730LXZ Description

BFU730LXZ Description

The BFU730LXZ is a high-performance Bipolar RF Transistor from NXP Semiconductors, designed for applications requiring high-frequency operation and low noise. With a frequency transition of 53GHz, it is ideal for use in advanced communication systems. This NPN transistor offers a maximum collector current of 30mA and can handle up to 160mW of power, making it suitable for a variety of high-frequency applications.

BFU730LXZ Features

  • High Frequency Operation: The BFU730LXZ operates at a frequency transition of 53GHz, making it suitable for high-speed communication systems.
  • Low Noise: With a noise figure of 0.75dB @ 6GHz, this transistor provides excellent signal quality in high-frequency applications.
  • Surface Mount: The surface mount design allows for easy integration into modern electronic devices.
  • RF Performance: The BFU730LXZ offers a gain of 15.8dB, providing excellent signal amplification in RF applications.
  • DC Current Gain: With a minimum hFE of 205 @ 2mA, 3V, this transistor ensures reliable performance in various operating conditions.

BFU730LXZ Applications

The BFU730LXZ is ideal for use in a variety of high-frequency applications, including:

  • Communication Systems: Due to its high frequency transition and low noise figure, this transistor is well-suited for use in advanced communication systems.
  • RF Amplifiers: The high gain and power handling capabilities make it an excellent choice for RF amplifiers in various applications.
  • High-Speed Data Transmission: The BFU730LXZ's high-frequency operation makes it ideal for high-speed data transmission applications.

Conclusion of BFU730LXZ

The BFU730LXZ from NXP Semiconductors is a high-performance Bipolar RF Transistor that offers excellent high-frequency operation, low noise, and reliable performance. Its unique features and advantages make it an ideal choice for a variety of applications, including communication systems, RF amplifiers, and high-speed data transmission. With its technical specifications and performance benefits, the BFU730LXZ stands out as a leading option in the Bipolar RF Transistor market.

FAQ

What voltage specification is listed for BFU730LXZ?
The listed voltage-related specification for BFU730LXZ is 3V.
What package or case is BFU730LXZ available in?
What is the standard lead time for BFU730LXZ?
What operating temperature range does BFU730LXZ support?
Are there related or alternative parts for BFU730LXZ?
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