The BC847BWT1G is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and is known for its excellent electrical characteristics and reliability. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, the BC847BWT1G is suitable for a wide range of applications. It features a surface mount packaging, making it ideal for use in modern electronic devices.
The BC847BWT1G is an ideal choice for various applications due to its high performance and reliability. Some specific use cases include:
The BC847BWT1G is a versatile and high-performance NPN bipolar transistor that offers excellent electrical characteristics and reliability. Its unique features, such as high-frequency transition, low saturation voltage, and high DC current gain, make it an ideal choice for various applications, including general-purpose amplification, switching, signal processing, and automotive electronics. With its surface mount packaging and compliance with RoHS3, the BC847BWT1G is a reliable and environmentally friendly option for modern electronic devices.
Download datasheets and manufacturer documentation for BC847BWT1G