onsemi_BC847BWT1G

onsemi
BC847BWT1G  
Single Bipolar Transistors

onsemi
BC847BWT1G
276-BC847BWT1G
Ersa
onsemi-BC847BWT1G-datasheets-9801577.pdf
TRANS NPN 45V 0.1A SC70-3
In Stock : 103878

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 20+
    • $0.03206
    • $0.64
    • 200+
    • $0.02539
    • $5.08
    • 600+
    • $0.02168
    • $13.01
    • 3000+
    • $0.01876
    • $56.28
    ADD TO CART
    QUICK ORDER
    $0.00000    $0.00
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    BC847BWT1G Description

    BC847BWT1G Description

    The BC847BWT1G is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and is known for its excellent electrical characteristics and reliability. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, the BC847BWT1G is suitable for a wide range of applications. It features a surface mount packaging, making it ideal for use in modern electronic devices.

    BC847BWT1G Features

    • Frequency - Transition: 100MHz
    • Current - Collector (Ic) (Max): 100 mA
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
    • ECCN: EAR99
    • Mounting Type: Surface Mount
    • Product Status: Active
    • Voltage - Collector Emitter Breakdown (Max): 45 V
    • Transistor Type: NPN
    • Power - Max: 150 mW
    • REACH Status: REACH Unaffected
    • Mfr: onsemi
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • HTSUS: 8541.21.0075
    • Package: Tape & Reel (TR)
    • RoHS Status: ROHS3 Compliant
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Base Product Number: BC847
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)

    BC847BWT1G Applications

    The BC847BWT1G is an ideal choice for various applications due to its high performance and reliability. Some specific use cases include:

    1. General Purpose Amplification: The BC847BWT1G's high-frequency transition and low saturation voltage make it suitable for general-purpose amplification applications.
    2. Switching Applications: With a maximum collector current of 100mA, this device can be used in low-power switching applications.
    3. Signal Processing: The BC847BWT1G's high DC current gain and low saturation voltage make it ideal for signal processing applications.
    4. Automotive Electronics: Due to its high reliability and performance, the BC847BWT1G can be used in automotive electronics for various signal processing and switching tasks.

    Conclusion of BC847BWT1G

    The BC847BWT1G is a versatile and high-performance NPN bipolar transistor that offers excellent electrical characteristics and reliability. Its unique features, such as high-frequency transition, low saturation voltage, and high DC current gain, make it an ideal choice for various applications, including general-purpose amplification, switching, signal processing, and automotive electronics. With its surface mount packaging and compliance with RoHS3, the BC847BWT1G is a reliable and environmentally friendly option for modern electronic devices.

    Tech Specifications

    Configuration
    PPAP
    Maximum Base Emitter Saturation Voltage (V)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Maximum Transition Frequency (MHz)
    Vce Saturation (Max) @ Ib, Ic
    Material
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Operating Junction Temperature (°C)
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    Maximum Collector Cut-Off Current (nA)
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Unit Weight
    Continuous Collector Current
    RoHS
    Maximum DC Collector Current
    Technology
    Collector-Emitter Saturation Voltage
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Width
    Mounting Style
    Transistor Polarity
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Length
    Gain Bandwidth Product fT
    Collector- Emitter Voltage VCEO Max
    Pd - Power Dissipation
    USHTS

    BC847BWT1G Documents

    Download datasheets and manufacturer documentation for BC847BWT1G

    Ersa Mult Dev 05/Dec/2019      
    Ersa BC846-48      
    Ersa BC846-48      
    Ersa Copper Wire 19/May/2010      
    Ersa Material Declaration BC847BWT1G       onsemi RoHS      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service