onsemi_BCW68GLT1G
BCW68GLT1G(1)
BCW68GLT1G(2)
BCW68GLT1G(3)
BCW68GLT1G(4)
BCW68GLT1G(5)

onsemi
BCW68GLT1G  
Single Bipolar Transistors

onsemi
BCW68GLT1G
276-BCW68GLT1G
Ersa
onsemi-BCW68GLT1G-datasheets-4409273.pdf
TRANS PNP 45V 0.8A SOT23-3
In Stock : 29625

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    BCW68GLT1G Description

    BCW68GLT1G Description

    The BCW68GLT1G is a high-performance PNP bipolar transistor designed and manufactured by onsemi. This single Bipolar Transistor features a Surface Mount packaging type, making it suitable for a wide range of applications in the electronics industry. With its 100MHz frequency transition, the BCW68GLT1G offers excellent high-frequency performance, making it ideal for use in various communication and signal processing systems.

    BCW68GLT1G Features

    • Technical Specifications:

      • Frequency - Transition: 100MHz
      • Current - Collector (Ic) (Max): 800 mA
      • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA
      • Voltage - Collector Emitter Breakdown (Max): 45 V
      • Power - Max: 225 mW
      • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
      • Current - Collector Cutoff (Max): 20nA
      • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Performance Benefits:

      • High-frequency performance up to 100MHz
      • Low Vce saturation voltage for improved efficiency
      • High collector current capacity of 800 mA
      • Robust collector-emitter breakdown voltage of 45V
    • Unique Features and Advantages:

      • Surface Mount packaging for easy integration into modern electronics designs
      • Active product status, ensuring ongoing availability and support
      • REACH Unaffected and RoHS3 Compliant, making it suitable for environmentally conscious applications

    BCW68GLT1G Applications

    The BCW68GLT1G is ideal for a variety of applications where high-frequency performance and robustness are required. Some specific use cases include:

    1. Communication Systems: Due to its high-frequency capabilities, the BCW68GLT1G is well-suited for use in communication systems, such as radio frequency (RF) amplifiers and mixers.
    2. Signal Processing: The transistor's high current gain and low saturation voltage make it an excellent choice for signal processing applications, including audio amplifiers and filters.
    3. Automotive Electronics: The BCW68GLT1G's robustness and high collector-emitter breakdown voltage make it suitable for automotive electronics, such as ignition systems and power management circuits.

    Conclusion of BCW68GLT1G

    The BCW68GLT1G is a versatile and high-performance PNP bipolar transistor that offers excellent high-frequency performance, robustness, and reliability. Its unique features and advantages make it an ideal choice for a wide range of applications in the electronics industry, including communication systems, signal processing, and automotive electronics. With its ongoing availability and support, the BCW68GLT1G is a reliable choice for your next electronics project.

    Tech Specifications

    Configuration
    PPAP
    Maximum Base Emitter Saturation Voltage (V)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Maximum Transition Frequency (MHz)
    Vce Saturation (Max) @ Ib, Ic
    Material
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Unit Weight
    Continuous Collector Current
    RoHS
    Maximum DC Collector Current
    Technology
    Collector-Emitter Saturation Voltage
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Width
    Mounting Style
    Transistor Polarity
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Length
    Gain Bandwidth Product fT
    Collector- Emitter Voltage VCEO Max
    Pd - Power Dissipation
    USHTS

    BCW68GLT1G Documents

    Download datasheets and manufacturer documentation for BCW68GLT1G

    Ersa Mold Compound 02/Apr/2020      
    Ersa BCW68GL      
    Ersa BCW68GL      
    Ersa SOT23 16/Sep/2016       Copper Wire Update 10/Sep/2015      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration BCW68GLT1G      

    Shopping Guide

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    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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