The BD239C from onsemi is a robust NPN bipolar junction transistor (BJT) designed for medium-power applications. Housed in a TO-220-3 package, it offers a collector-emitter voltage (Vce) rating of 100V and a maximum collector current (Ic) of 2A, making it suitable for switching and amplification tasks in demanding environments. With a power dissipation capability of 30W and an operating junction temperature (TJ) of up to 150°C, this transistor ensures reliable performance under high thermal stress. Its low Vce saturation voltage (700mV @ 1A) and moderate DC current gain (hFE ≥ 15 @ 1A, 4V) enhance efficiency in linear and switching circuits.
The BD239C excels in:
The BD239C stands out as a versatile, high-performance NPN transistor for medium-power applications requiring thermal endurance and efficiency. Its low saturation voltage, high voltage tolerance, and compliance with environmental standards make it a preferred choice for engineers designing power electronics, motor controls, and audio systems. With onsemi's proven reliability, this transistor is a dependable component for both prototyping and mass production.
Download datasheets and manufacturer documentation for BD239C