onsemi_BD239C

onsemi
BD239C  
Single Bipolar Transistors

onsemi
BD239C
276-BD239C
Ersa
onsemi-BD239C-datasheets-10289527.pdf
TRANS NPN 100V 2A TO220-3
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BD239C Description

BD239C Description

The BD239C from onsemi is a robust NPN bipolar junction transistor (BJT) designed for medium-power applications. Housed in a TO-220-3 package, it offers a collector-emitter voltage (Vce) rating of 100V and a maximum collector current (Ic) of 2A, making it suitable for switching and amplification tasks in demanding environments. With a power dissipation capability of 30W and an operating junction temperature (TJ) of up to 150°C, this transistor ensures reliable performance under high thermal stress. Its low Vce saturation voltage (700mV @ 1A) and moderate DC current gain (hFE ≥ 15 @ 1A, 4V) enhance efficiency in linear and switching circuits.

BD239C Features

  • High Voltage & Current Handling: Supports 100V Vce and 2A Ic, ideal for power regulation.
  • Low Saturation Voltage: 700mV @ 1A minimizes power loss in switching applications.
  • Thermal Resilience: 30W power dissipation and 150°C TJ ensure stability in high-temperature environments.
  • Compliance & Reliability: ROHS3 compliant, REACH unaffected, and EAR99 classified for broad industrial use.
  • Through-Hole Mounting: TO-220-3 package simplifies heat sinking and mechanical integration.

BD239C Applications

The BD239C excels in:

  • Power Supplies: Linear regulators, voltage stabilizers, and DC-DC converters.
  • Motor Control: Driver stages for small motors and solenoids.
  • Audio Amplifiers: Output stages in Class AB amplifiers due to its moderate gain.
  • Switching Circuits: Relay drivers, LED drivers, and inductive load switches.
  • Industrial Systems: Robust enough for automation controls and power management.

Conclusion of BD239C

The BD239C stands out as a versatile, high-performance NPN transistor for medium-power applications requiring thermal endurance and efficiency. Its low saturation voltage, high voltage tolerance, and compliance with environmental standards make it a preferred choice for engineers designing power electronics, motor controls, and audio systems. With onsemi's proven reliability, this transistor is a dependable component for both prototyping and mass production.

Tech Specifications

Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
ECCN
Mounting Type
Product Status
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Series
Transistor Type
Package / Case
Power - Max
REACH Status
Mfr
Current - Collector Cutoff (Max)
HTSUS
Package
RoHS Status
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Moisture Sensitivity Level (MSL)
Category
Configuration
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
PPAP
Maximum Power Dissipation (mW)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Package Height
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Maximum Emitter Base Voltage (V)
Material
Package Length
Standard Package Name
Pin Count
Mounting
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Tab
Maximum DC Collector Current (A)
Lead Shape
Part Status
SVHC
Package Width

BD239C Documents

Download datasheets and manufacturer documentation for BD239C

Ersa Mult Dev 21/Apr/2929      
Ersa BD239/A/B/C      
Ersa Mult Devices 24/Oct/2017      
Ersa TO220B03 Pkg Drawing      
Ersa Logo 17/Aug/2017       Lead Frame Dimensions 29/Nov/2007      
Ersa onsemi RoHS       Material Declaration BD239C      

Shopping Guide

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