onsemi_CPH6350-TL-W

onsemi
CPH6350-TL-W  
Single FETs, MOSFETs

onsemi
CPH6350-TL-W
278-CPH6350-TL-W
Ersa
onsemi-CPH6350-TL-W-datasheets-8821039.pdf
MOSFET P-CH 30V 6A 6CPH
In Stock : 29244

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    CPH6350-TL-W Description

    CPH6350-TL-W Description

    The CPH6350-TL-W is a high-performance MOSFET P-CH 30V 6A 6CPH manufactured by onsemi. This single FET is designed to deliver exceptional performance and reliability in various electronic applications. With its advanced MOSFET technology, the CPH6350-TL-W offers a wide range of technical specifications that make it an ideal choice for demanding applications.

    CPH6350-TL-W Features

    • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
    • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
    • Product Status: Active
    • Drain to Source Voltage (Vdss): 30 V
    • Power Dissipation (Max): 1.6W (Ta)
    • Technology: MOSFET (Metal Oxide)
    • REACH Status: REACH Unaffected
    • Manufacturer: onsemi
    • Vgs (Max): ±20V
    • RoHS Status: ROHS3 Compliant
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Operating Temperature: 150°C (TJ)
    • ECCN: EAR99
    • Mounting Type: Surface Mount
    • Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
    • HTSUS: 8541.29.0095
    • Package: Tape & Reel (TR)
    • Base Product Number: CPH6350

    CPH6350-TL-W Applications

    The CPH6350-TL-W is ideal for a variety of applications where high performance and reliability are critical. Some specific use cases include:

    1. Power Management: Due to its low Rds On and high current handling capabilities, the CPH6350-TL-W is perfect for power management applications in consumer electronics, industrial equipment, and automotive systems.
    2. Motor Control: The MOSFET's ability to handle high voltages and currents makes it suitable for motor control applications, such as in robotics, drones, and electric vehicles.
    3. Switching Applications: The CPH6350-TL-W's fast switching capabilities and low gate charge make it ideal for high-frequency switching applications, such as in power supplies and inverters.

    Conclusion of CPH6350-TL-W

    The CPH6350-TL-W is a versatile and high-performance MOSFET that offers numerous advantages over similar models. Its unique combination of low Rds On, high current handling, and advanced MOSFET technology make it an ideal choice for a wide range of applications. With its active product status, REACH unaffected status, and RoHS3 compliance, the CPH6350-TL-W is a reliable and environmentally friendly solution for your electronic design needs.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Series
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Part Status
    Package Width
    Base Product Number
    Mounting Style
    Unit Weight
    Vgs - Gate-Source Voltage
    Id - Continuous Drain Current
    Transistor Polarity
    RoHS
    Qg - Gate Charge
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Transistor Type
    Number of Channels
    Maximum Operating Temperature
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS
    Rds On - Drain-Source Resistance

    CPH6350-TL-W Documents

    Download datasheets and manufacturer documentation for CPH6350-TL-W

    Ersa CPH6350      
    Ersa CPH6350      
    Ersa Raw Material Change 22/Jul/2015      
    Ersa onsemi RoHS       Material Declaration CPH6350-TL-W      

    Shopping Guide

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    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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