onsemi_FDMC86340ET80

onsemi
FDMC86340ET80  
Single FETs, MOSFETs

onsemi
FDMC86340ET80
278-FDMC86340ET80
Ersa
onsemi-FDMC86340ET80-datasheets-3552172.pdf
MOSFET N-CH 80V 14A/68A POWER33
In Stock : 21

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FDMC86340ET80 Description

FDMC86340ET80 Description

The FDMC86340ET80 from onsemi is a high-performance N-channel MOSFET utilizing advanced PowerTrench® technology, designed for efficient power management in demanding applications. With a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 14A (Ta) / 68A (Tc), this MOSFET delivers robust performance in both ambient and controlled thermal environments. Its low on-resistance (Rds(on)) of 6.5mΩ at 10V Vgs ensures minimal conduction losses, making it ideal for high-efficiency power conversion. Packaged in Power33 (3.3mm x 3.3mm), it offers a compact footprint for space-constrained designs while maintaining excellent thermal dissipation.

FDMC86340ET80 Features

  • Low Rds(on): 6.5mΩ @ 10V Vgs reduces power losses and improves efficiency.
  • High Current Handling: 68A (Tc) capability supports high-power applications.
  • Fast Switching: Low gate charge (Qg) of 49nC @ 10V and input capacitance (Ciss) of 2775pF @ 40V enable rapid switching for high-frequency designs.
  • Robust Voltage Ratings: Vdss of 80V and Vgs(max) of ±20V ensure reliability under varying conditions.
  • Thermal Efficiency: Power dissipation of 65W (Tc) allows sustained performance in thermally challenging environments.
  • Compact Package: Power33 surface-mount package optimizes board space without compromising thermal performance.
  • Compliance: ROHS3, REACH Unaffected, and ECCN EAR99 certified for global use.

FDMC86340ET80 Applications

This MOSFET is particularly suited for:

  • DC-DC Converters: High efficiency and low Rds(on) make it ideal for synchronous buck/boost converters.
  • Motor Drives: Robust current handling supports brushed/brushless motor control in industrial and automotive systems.
  • Power Supplies: Used in SMPS (Switched-Mode Power Supplies) for servers, telecom, and computing infrastructure.
  • Battery Management Systems (BMS): Efficient power switching in electric vehicles (EVs) and energy storage solutions.
  • Load Switches: Fast switching and low conduction losses benefit high-current load switching applications.

Conclusion of FDMC86340ET80

The FDMC86340ET80 stands out as a high-efficiency, high-reliability MOSFET for modern power electronics. Its low Rds(on), high current capability, and compact Power33 package make it a superior choice for applications demanding minimal power loss, thermal resilience, and space efficiency. Whether in DC-DC conversion, motor control, or high-density power systems, this MOSFET delivers performance that meets the stringent requirements of industrial, automotive, and telecom applications. Its compliance with global standards further ensures seamless integration into diverse designs.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Maximum Gate Source Leakage Current (nA)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Maximum IDSS (uA)
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Maximum Drain Source Resistance (mOhm)
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Lead Shape
Part Status
SVHC
Maximum Gate Threshold Voltage (V)
Package Width
Typical Gate Charge @ Vgs (nC)

FDMC86340ET80 Documents

Download datasheets and manufacturer documentation for FDMC86340ET80

Ersa Mult Dev Assembly 11/Mar/2020      
Ersa FDMC86340ET80      
Ersa Mult Devices 24/Oct/2017      
Ersa Logo 17/Aug/2017      
Ersa onsemi RoHS       Material Declaration FDMC86340ET80      

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