onsemi_DTC115EET1G

onsemi
DTC115EET1G  
Single, Pre-Biased Bipolar Transistors

onsemi
DTC115EET1G
292-DTC115EET1G
Ersa
onsemi-DTC115EET1G-datasheets-9836423.pdf
TRANS PREBIAS NPN 50V 0.1A SC75
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    DTC115EET1G Description

    DTC115EET1G Description

    The DTC115EET1G is a high-performance, pre-biased NPN bipolar transistor offered by onsemi. This device is designed to provide excellent electrical characteristics and reliability in various applications. With a maximum collector current of 100 mA and a breakdown voltage of 50 V, the DTC115EET1G is suitable for a wide range of electronic circuits. Its surface mount packaging allows for easy integration into modern electronic designs.

    DTC115EET1G Features

    • Technical Specifications:

      • Maximum Collector Current (Ic): 100 mA
      • Maximum Collector-Emitter Breakdown Voltage (Vce): 50 V
      • Maximum Power Dissipation: 200 mW
      • DC Current Gain (hFE): Min 80 @ 5mA, 10V
      • Base Resistor (R1): 100 kOhms
      • Emitter-Base Resistor (R2): 100 kOhms
      • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
      • Maximum Collector Cutoff Current: 500nA
    • Performance Benefits:

      • Pre-biased design for simplified circuit design and reduced external components
      • Low saturation voltage for improved efficiency in low-voltage applications
      • High current gain for reliable signal amplification
      • Surface mount packaging for space-saving and efficient PCB layout
    • Unique Advantages:

      • Active product status ensures ongoing availability and support from onsemi
      • REACH unaffected and RoHS3 compliant, making it suitable for environmentally conscious designs
      • Moisture Sensitivity Level (MSL) 1, allowing for unlimited storage time without baking

    DTC115EET1G Applications

    The DTC115EET1G is ideal for various applications where a pre-biased NPN bipolar transistor is required. Some specific use cases include:

    1. Audio Amplifiers: The low saturation voltage and high current gain make it suitable for audio signal amplification in consumer electronics.
    2. Power Management: Its ability to handle up to 100 mA of collector current makes it suitable for power management circuits in battery-operated devices.
    3. Signal Conditioning: The pre-biased design simplifies circuit design, making it ideal for signal conditioning applications in industrial and automotive systems.
    4. Communication Systems: The DTC115EET1G can be used in communication systems for signal amplification and switching applications.

    Conclusion of DTC115EET1G

    The DTC115EET1G is a versatile, pre-biased NPN bipolar transistor that offers excellent performance and reliability in a wide range of applications. Its unique features, such as pre-biasing, low saturation voltage, and high current gain, make it an ideal choice for audio amplifiers, power management, signal conditioning, and communication systems. With ongoing support from onsemi and compliance with environmental regulations, the DTC115EET1G is a reliable choice for your next electronic design.

    Tech Specifications

    Configuration
    PCB changed
    HTS
    Maximum Collector-Emitter Voltage (V)
    Resistor - Base (R1)
    ECCN (US)
    PPAP
    Maximum Power Dissipation (mW)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Supplier Device Package
    Automotive
    Typical Resistor Ratio
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Package Height
    Mfr
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Maximum Continuous DC Collector Current (mA)
    Current - Collector (Ic) (Max)
    Typical Input Resistor (kOhm)
    Vce Saturation (Max) @ Ib, Ic
    ECCN
    Package Length
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Series
    Type
    Minimum DC Current Gain
    Lead Shape
    Power - Max
    Resistor - Emitter Base (R2)
    Part Status
    Current - Collector Cutoff (Max)
    HTSUS
    Package
    Package Width
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Mounting Style
    Unit Weight
    Transistor Polarity
    Peak DC Collector Current
    Continuous Collector Current
    RoHS
    Minimum Operating Temperature
    Length
    DC Current Gain hFE Max
    Collector- Emitter Voltage VCEO Max
    Typical Input Resistor
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Pd - Power Dissipation
    USHTS
    Width

    DTC115EET1G Documents

    Download datasheets and manufacturer documentation for DTC115EET1G

    Ersa Wafer Source Addition 26/Nov/2014      
    Ersa MUN(2,5)236, DTC115xx      
    Ersa MUN(2,5)236, DTC115xx      
    Ersa Copper Wire 29/Oct/2009      
    Ersa onsemi RoHS       Material Declaration DTC115EET1G      

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