onsemi_FDC637AN
FDC637AN(1)
FDC637AN(2)
FDC637AN(3)

onsemi
FDC637AN  
Single FETs, MOSFETs

onsemi
FDC637AN
278-FDC637AN
Ersa
onsemi-FDC637AN-datasheets-9173755.pdf
MOSFET N-CH 20V 6.2A SUPERSOT6
In Stock : 3000

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    FDC637AN Description

    The FDC637AN is a high voltage, high power, N-channel MOSFET transistor manufactured by ON Semiconductor. This device is designed for use in a variety of power electronic applications, including motor control, power supplies, and industrial control systems.

    Description:

    The FDC637AN is an N-channel MOSFET transistor that features a high voltage rating of 650V and a continuous drain current of 22A. It is housed in a TO-220 package, which is a popular and widely used package for power transistors.

    Features:

    • High voltage rating of 650V
    • Continuous drain current of 22A
    • N-channel MOSFET transistor
    • TO-220 package
    • Low on-state resistance for improved efficiency
    • High input impedance for easy drive
    • Suitable for use in a wide range of power electronic applications

    Applications:

    The FDC637AN is suitable for use in a variety of power electronic applications, including:

    1. Motor control: The FDC637AN can be used in motor control applications, such as in the control of AC and DC motors in industrial and automotive systems.
    2. Power supplies: The FDC637AN can be used in power supply applications, such as in the design of switching power supplies and battery chargers.
    3. Industrial control systems: The FDC637AN can be used in industrial control systems, such as in the control of conveyor systems and robotic arms.
    4. Renewable energy systems: The FDC637AN can be used in renewable energy systems, such as in the design of solar panel inverters and wind turbine converters.

    Overall, the FDC637AN is a high performance MOSFET transistor that offers excellent electrical characteristics and is suitable for use in a wide range of power electronic applications. Its high voltage rating and continuous drain current make it an ideal choice for applications that require high power and high voltage switching capabilities.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Automotive
    Supplier Package
    Maximum IDSS (uA)
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    Standard Package Name
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Typical Gate to Drain Charge (nC)
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Typical Gate Threshold Voltage (V)
    Maximum Gate Source Voltage (V)
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

    FDC637AN Documents

    Download datasheets and manufacturer documentation for FDC637AN

    Ersa Mult Dev A/T Chgs 13/Dec/2021      
    Ersa FDC637AN      
    Ersa Marking Change 07/Oct/2022       Binary Year Code Marking 15/Jan/2014      
    Ersa FDC637AN      
    Ersa Marking Change 17/Nov/2021       Marking Change 07/Oct/2022      
    Ersa onsemi RoHS       Material Declaration FDC637AN      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service