onsemi_FDG6318PZ
original

onsemi
FDG6318PZ

289-FDG6318PZ
PDF Datasheet
Dual P-Channel JFET, -20V, -500mA, 780mR, Surface Mount

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Tech Specifications

Package/Case
SC
Continuous Drain Current (ID)
500mA
Current Rating
-500mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
780mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
780MR
Element Configuration
Dual
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FDG6318PZ Description

FDG6318PZ Description

The FDG6318PZ is a MOSFET (Metal Oxide) device manufactured by onsemi, specifically designed for logic level gate applications. This device is part of the FET category and falls under the MOSFET Arrays subcategory. With its obsolete status, it is essential to consider its unique features and advantages when seeking a suitable replacement or for specific applications where this model is ideal.

FDG6318PZ Features

  • Logic Level Gate: The FDG6318PZ is designed for logic level gate applications, making it suitable for use in digital circuits and systems.
  • Input Capacitance (Ciss) (Max) @ Vds: 85.4pF @ 10V, ensuring low capacitance for faster switching speeds and reduced power consumption.
  • Gate Charge (Qg) (Max) @ Vgs: 1.62nC @ 4.5V, contributing to the device's overall efficiency and performance.
  • Rds On (Max) @ Id, Vgs: 780mOhm @ 500mA, 4.5V, providing low on-resistance for improved current handling capabilities.
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA, ensuring reliable threshold voltage performance.
  • Drain to Source Voltage (Vdss): 20V, allowing the device to handle higher voltage applications.
  • Power - Max: 300mW, enabling the device to operate in various power-sensitive applications.
  • Current - Continuous Drain (Id) @ 25°C: 500mA, providing ample current handling for a wide range of applications.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating that the device is not sensitive to moisture and can be stored and used in various environments.

FDG6318PZ Applications

The FDG6318PZ is ideal for use in digital circuits, logic level gate applications, and systems requiring low on-resistance and high voltage handling capabilities. Some specific use cases include:

  1. Digital signal processing
  2. Power management systems
  3. Motor control applications
  4. Consumer electronics
  5. Industrial control systems

Conclusion of FDG6318PZ

The FDG6318PZ is a versatile MOSFET device designed for logic level gate applications, offering unique features such as low input capacitance, low gate charge, and high voltage handling capabilities. Although it is now considered obsolete, its performance benefits and technical specifications make it an ideal choice for specific applications where these characteristics are crucial. When seeking a replacement or considering the use of this device, it is essential to evaluate its advantages over similar models and determine its suitability for the intended application.

FAQ

Are there related or alternative parts for FDG6318PZ?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is FDG6318PZ available in?
Is FDG6318PZ currently in stock?
What voltage specification is listed for FDG6318PZ?
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