onsemi_FDG6320C
original

onsemi
FDG6320C

289-FDG6320C
PDF Datasheet
Dual N/P-Ch JFET, 25V, 220mA, 4R, SC, SMD

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
SC
Continuous Drain Current (ID)
220mA
Current Rating
220mA
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Fall Time
8ns
Show More

FDG6320C Description

The FDG6320C is a high-power MOSFET transistor manufactured by ON Semiconductor. This device is designed for use in a wide range of applications, including power switching and amplification in power electronics circuits. Here is a description of the FDG6320C, including its features and applications:

Description:

The FDG6320C is an N-channel enhancement mode field-effect transistor (MOSFET) with a high voltage and current rating. It is designed for use in high-power applications, such as power switching and amplification in power electronics circuits. The device features a low on-state resistance (RDS(on)) and fast switching characteristics, making it suitable for use in a variety of power conversion applications.

Features:

  1. High Voltage and Current Rating: The FDG6320C has a high voltage rating of 100V and a continuous drain current (ID) of 18A, making it suitable for use in high-power applications.
  2. Low On-State Resistance: The device has a low on-state resistance (RDS(on)) of 4.5 mΩ (maximum), which helps to minimize power dissipation and improve efficiency in power conversion circuits.
  3. Fast Switching Characteristics: The FDG6320C has fast switching characteristics, with a low input capacitance and a low switching charge, making it suitable for use in high-frequency power conversion applications.
  4. Avalanche Energy-Capable: The device is designed to withstand high levels of energy during avalanche conditions, which can occur during power switching.
  5. Built-in Body Diode: The FDG6320C features a built-in body diode for efficient bidirectional conduction during switching.

Applications:

  1. Power Switching: The FDG6320C is suitable for use in power switching applications, such as in power supplies, motor control circuits, and battery charging systems.
  2. Amplification: The device can be used in power amplification applications, such as in audio amplifiers and power amplifiers for radio frequency (RF) applications.
  3. Power Conversion: The FDG6320C is suitable for use in power conversion applications, such as in DC-DC converters, AC-DC converters, and inverters.
  4. Motor Control: The device can be used in motor control applications, such as in brushless DC (BLDC) motor controllers and stepper motor drivers.
  5. Renewable Energy Systems: The FDG6320C can be used in renewable energy systems, such as solar power inverters and wind turbine converters.

In summary, the FDG6320C is a high-power MOSFET transistor with a high voltage and current rating, low on-state resistance, and fast switching characteristics. It is suitable for use in a wide range of power electronics applications, including power switching, amplification, power conversion, motor control, and renewable energy systems.

FAQ

What is FDG6320C?
FDG6320C is a FET, MOSFET Arrays from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the mounting type of FDG6320C?
Are there related or alternative parts for FDG6320C?
What package or case is FDG6320C available in?
What voltage specification is listed for FDG6320C?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ