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FDG6320C(1)
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onsemi
FDG6320C  
FET, MOSFET Arrays

onsemi
FDG6320C
289-FDG6320C
Ersa
onsemi-FDG6320C-datasheets-10972289.pdf
MOSFET N/P-CH 25V 0.22A SC88
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FDG6320C Description

The FDG6320C is a high-power MOSFET transistor manufactured by ON Semiconductor. This device is designed for use in a wide range of applications, including power switching and amplification in power electronics circuits. Here is a description of the FDG6320C, including its features and applications:

Description:

The FDG6320C is an N-channel enhancement mode field-effect transistor (MOSFET) with a high voltage and current rating. It is designed for use in high-power applications, such as power switching and amplification in power electronics circuits. The device features a low on-state resistance (RDS(on)) and fast switching characteristics, making it suitable for use in a variety of power conversion applications.

Features:

  1. High Voltage and Current Rating: The FDG6320C has a high voltage rating of 100V and a continuous drain current (ID) of 18A, making it suitable for use in high-power applications.
  2. Low On-State Resistance: The device has a low on-state resistance (RDS(on)) of 4.5 mΩ (maximum), which helps to minimize power dissipation and improve efficiency in power conversion circuits.
  3. Fast Switching Characteristics: The FDG6320C has fast switching characteristics, with a low input capacitance and a low switching charge, making it suitable for use in high-frequency power conversion applications.
  4. Avalanche Energy-Capable: The device is designed to withstand high levels of energy during avalanche conditions, which can occur during power switching.
  5. Built-in Body Diode: The FDG6320C features a built-in body diode for efficient bidirectional conduction during switching.

Applications:

  1. Power Switching: The FDG6320C is suitable for use in power switching applications, such as in power supplies, motor control circuits, and battery charging systems.
  2. Amplification: The device can be used in power amplification applications, such as in audio amplifiers and power amplifiers for radio frequency (RF) applications.
  3. Power Conversion: The FDG6320C is suitable for use in power conversion applications, such as in DC-DC converters, AC-DC converters, and inverters.
  4. Motor Control: The device can be used in motor control applications, such as in brushless DC (BLDC) motor controllers and stepper motor drivers.
  5. Renewable Energy Systems: The FDG6320C can be used in renewable energy systems, such as solar power inverters and wind turbine converters.

In summary, the FDG6320C is a high-power MOSFET transistor with a high voltage and current rating, low on-state resistance, and fast switching characteristics. It is suitable for use in a wide range of power electronics applications, including power switching, amplification, power conversion, motor control, and renewable energy systems.

Tech Specifications

Operating Temperature
FET Feature
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
ECCN
Mounting Type
Product Status
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Drain to Source Voltage (Vdss)
Series
Package / Case
Technology
Power - Max
REACH Status
Mfr
Current - Continuous Drain (Id) @ 25°C
HTSUS
Package
RoHS Status
Base Product Number
Moisture Sensitivity Level (MSL)

FDG6320C Documents

Download datasheets and manufacturer documentation for FDG6320C

Ersa Mult Dev Assembly/Test 9/Jan/2019      
Ersa FDG6320C      
Ersa Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      
Ersa Mult Dev EOL 08/Jul/2021       Mult Dev EOL 24/Dec/2021       Mult Dev EOL 14/Jan/2022      
Ersa FDG6320C      
Ersa Logo 17/Aug/2017       Mold Compound 12/Dec/2007      
Ersa onsemi RoHS       onsemi REACH       Material Declaration FDG6320C      

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