onsemi_FDMS4D5N08LC

onsemi
FDMS4D5N08LC  
Single FETs, MOSFETs

onsemi
FDMS4D5N08LC
278-FDMS4D5N08LC
Ersa
onsemi-FDMS4D5N08LC-datasheets-4893981.pdf
MOSFET N-CH 80V 17A/116A 8PQFN
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    FDMS4D5N08LC Description

    FDMS4D5N08LC is a power MOSFET manufactured by ON Semiconductor. It is a N-channel enhancement mode field-effect transistor (FET) with a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of 5.4A. The device is designed for low voltage, high current applications and is suitable for use in a variety of power management circuits.

    Description:

    The FDMS4D5N08LC is a high-performance power MOSFET that offers low on-state resistance (RDS(on)) and fast switching speeds. It is available in a TO-220 package, which is a popular choice for power applications due to its ability to dissipate heat effectively.

    Features:

    • N-channel, enhancement mode
    • Low on-state resistance (RDS(on)) of 5.8 milliohms (max) at VGS = 10V
    • Fast switching speeds with a typical gate charge (Qg) of 36nC
    • High input impedance
    • Logic level compatible
    • Avalanche energy capable

    Applications:

    The FDMS4D5N08LC is suitable for a wide range of power management applications, including:

    • DC-DC converters
    • Motor drivers
    • Power management in battery-powered devices
    • LED lighting
    • Class D audio amplifiers
    • Load switching

    In summary, the FDMS4D5N08LC is a high-performance power MOSFET that offers low on-state resistance and fast switching speeds, making it an ideal choice for a variety of power management applications. Its TO-220 package allows for effective heat dissipation, making it suitable for use in high power applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    FDMS4D5N08LC Documents

    Download datasheets and manufacturer documentation for FDMS4D5N08LC

    Ersa FDMS4D5N08LC      
    Ersa FDMS4D5N08LC      
    Ersa onsemi RoHS       onsemi REACH      

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