onsemi_FDMS86103L
FDMS86103L(1)
FDMS86103L(2)

onsemi
FDMS86103L  
Single FETs, MOSFETs

onsemi
FDMS86103L
278-FDMS86103L
Ersa
onsemi-FDMS86103L-datasheets-3198611.pdf
MOSFET N-CH 100V 12A/49A 8PQFN
In Stock : 2686

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FDMS86103L Description

The FDMS86103L is a high-performance, single-channel MOSFET driver from ON Semiconductor. It is designed to drive N-channel MOSFETs in a wide range of applications, including motor control, power management, and industrial control systems.

Description:

The FDMS86103L is a monolithic integrated circuit that provides high-speed switching and precise control of N-channel MOSFETs. It features a high-voltage input with over-voltage protection, a low-voltage output with under-voltage lockout, and a high-current output capable of driving MOSFETs with gate charge up to 100nC.

Features:

  1. High-voltage input with over-voltage protection
  2. Low-voltage output with under-voltage lockout
  3. High-current output capable of driving MOSFETs with gate charge up to 100nC
  4. Wide operating voltage range (4.5V to 18V)
  5. Low input-to-output propagation delay (60ns typ.)
  6. Low input capacitance (5pF typ.)
  7. High noise immunity with 15V/ms typical slew rate
  8. Short-circuit protection
  9. Thermal shutdown protection
  10. Small package size (SOIC-8)

Applications:

  1. Motor control applications, such as brushless DC (BLDC) motor control and stepper motor control
  2. Power management applications, such as battery management systems and power supply control
  3. Industrial control systems, such as robotic control and factory automation
  4. Automotive applications, such as electric power steering (EPS) and electric vehicle (EV) motor control
  5. Renewable energy applications, such as solar panel power management and wind turbine control systems

The FDMS86103L is a versatile MOSFET driver that offers high performance and reliability in a wide range of applications. Its features, such as high-voltage input, low input-to-output propagation delay, and short-circuit protection, make it an ideal choice for demanding applications that require precise control and high-speed switching of N-channel MOSFETs.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Supplier Package
Maximum IDSS (uA)
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Standard Package Name
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Typical Gate to Drain Charge (nC)
SVHC
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Typical Drain Source Resistance @ 25°C (mOhm)
Typical Gate Threshold Voltage (V)
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

FDMS86103L Documents

Download datasheets and manufacturer documentation for FDMS86103L

Ersa Cancellation 20/Feb/2020      
Ersa FDMS86103L      
Ersa Mult Devices 24/Oct/2017      
Ersa Logo 17/Aug/2017      
Ersa onsemi RoHS       Material Declaration FDMS86103L       onsemi REACH      

Shopping Guide

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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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