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FDP083N15A-F102  

Single FETs, MOSFETs

FDP083N15A-F102 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It is a N-channel, logic level enhancement mode device that is designed for low voltage, high speed switching applications.

Description:

The FDP083N15A-F102 is a high performance MOSFET that features a low on-state resistance (RDS(on)) of 8.3 milliohms and a fast switching speed. It is available in a surface mount TO-263-5 package.

Features:

• N-channel, logic level enhancement mode MOSFET
• Low on-state resistance (RDS(on)) of 8.3 milliohms
• Fast switching speed
• Logic level gate drive
• Avalanche energy rating of 1750 joules
• Drain-Source voltage (VDS) of 100 volts
• Continuous drain current (ID) of 83.4 amperes
• Junction temperature range of -55°C to 175°C
• RoHS compliant

Applications:

The FDP083N15A-F102 is suitable for a wide range of applications that require low voltage, high speed switching. Some of the key applications include:

• DC-DC converters
• Motor control
• Power management in computers and servers
• Class D audio amplifiers
• Power supplies for consumer electronics
• Industrial control systems

In summary, the FDP083N15A-F102 is a high performance MOSFET that offers low on-state resistance and fast switching speed. It is suitable for a wide range of applications that require efficient and reliable power switching.

FDP083N15A-F102 Documents

Download datasheets and manufacturer documentation for FDP083N15A-F102

PCN Part Number :

Mult Device Part Number Chg 30/May/2017      

PCN Assembly/Origin :

Mult Dev Mold Chg 28/Oct/2019      

Datasheets :

FDP083N15A_F102      

PCN Packaging :

Mult Devices 24/Oct/2017       Tape and Box/Reel Barcode Update 07/Aug/2014      

PCN Design/Specification :

Logo 17/Aug/2017      

Environmental Information :

onsemi RoHS       Material Declaration FDP083N15A-F102       onsemi REACH