The FDT3612 is a high-performance N-channel MOSFET from onsemi, designed for applications requiring high efficiency and reliability. This device features a 100V drain-to-source voltage rating and can handle continuous drain currents up to 3.7A at 25°C. With a low on-resistance of 120mOhm at 3.7A and 10V gate-source voltage, the FDT3612 offers excellent efficiency in power switching applications.
The FDT3612 is ideal for a wide range of applications where high efficiency and reliability are critical. Some specific use cases include:
The FDT3612 is a versatile and high-performance N-channel MOSFET from onsemi, offering a combination of low on-resistance, high voltage and current ratings, and advanced PowerTrench® technology. Its unique features make it an excellent choice for a wide range of power electronics applications, including power supplies, motor control, automotive electronics, and telecommunications. With its compliance with RoHS and REACH regulations, the FDT3612 is also an environmentally friendly option for designers looking to meet strict regulatory requirements.
Download datasheets and manufacturer documentation for FDT3612