onsemi_FDT439N

onsemi
FDT439N  
Single FETs, MOSFETs

onsemi
FDT439N
278-FDT439N
Ersa
onsemi-FDT439N-datasheets-2469987.pdf
MOSFET N-CH 30V 6.3A SOT223-4
In Stock : 4505

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    FDT439N Description

    FDT439N Description

    The FDT439N is a high-performance MOSFET (Metal Oxide) from onsemi, designed for single FET applications. This N-channel device offers a wide range of technical specifications and performance benefits, making it an ideal choice for various electronic applications. With a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.3A at 25°C, the FDT439N delivers robust power handling capabilities. Its low on-resistance (Rds On) of 45mOhm at 6.3A and 4.5V ensures efficient power dissipation, while the maximum power dissipation is rated at 3W (Ta). The device is mounted on a surface mount package and is available in a tape & reel (TR) configuration.

    FDT439N Features

    • High Voltage Rating: The FDT439N boasts a maximum drain-source voltage (Vdss) of 30V, making it suitable for high-voltage applications.
    • Low On-Resistance: With an Rds On of just 45mOhm at 6.3A and 4.5V, the FDT439N offers efficient power dissipation and reduced power losses.
    • Robust Current Handling: The device can handle a continuous drain current (Id) of 6.3A at 25°C, making it ideal for applications requiring high current.
    • Low Gate Charge: The maximum gate charge (Qg) is 15nC at 4.5V, which contributes to faster switching speeds and reduced power consumption.
    • Wide Operating Temperature Range: The FDT439N is designed to operate over a wide temperature range, ensuring reliable performance in various environmental conditions.
    • Compliance with Industry Standards: The device is compliant with RoHS3 and REACH standards, making it suitable for use in environmentally conscious applications.

    FDT439N Applications

    The FDT439N is an ideal choice for a variety of applications where high voltage, low on-resistance, and robust current handling are required. Some specific use cases include:

    1. Power Management: The FDT439N's high voltage and current ratings make it suitable for power management applications, such as power supplies and battery management systems.
    2. Motor Control: The device's low on-resistance and high current handling capabilities make it ideal for motor control applications, including brushless DC motors and stepper motors.
    3. Industrial Automation: The FDT439N's robust performance and compliance with industry standards make it suitable for use in industrial automation systems, such as robotic arms and conveyor belts.
    4. Automotive Applications: The device's high voltage rating and low on-resistance make it suitable for automotive applications, such as electric vehicle charging systems and power windows.

    Conclusion of FDT439N

    The FDT439N from onsemi is a high-performance MOSFET designed for single FET applications, offering a wide range of technical specifications and performance benefits. Its high voltage rating, low on-resistance, and robust current handling capabilities make it an ideal choice for various electronic applications, including power management, motor control, industrial automation, and automotive systems. With its compliance with industry standards and wide operating temperature range, the FDT439N is a reliable and versatile solution for demanding applications.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Typical Input Capacitance @ Vds (pF)
    Category
    Configuration
    PCB changed
    Typical Turn-Off Delay Time (ns)
    HTS
    Number of Elements per Chip
    ECCN (US)
    Typical Rise Time (ns)
    PPAP
    Maximum Power Dissipation (mW)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Automotive
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Supplier Package
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Maximum Gate Source Voltage (V)
    Maximum Drain Source Voltage (V)
    SVHC Exceeds Threshold
    Maximum Drain Source Resistance (mOhm)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Standard Package Name
    Pin Count
    Mounting
    Tab
    Lead Shape
    Part Status
    SVHC
    Package Width
    Typical Gate Charge @ Vgs (nC)

    FDT439N Documents

    Download datasheets and manufacturer documentation for FDT439N

    Ersa Mult Dev Assembly Chg 21/May/2020      
    Ersa FDT439N      
    Ersa Mult Devices 24/Oct/2017      
    Ersa Mult Dev Retraction 14/Jan/2022       Mult Dev EOL 24/Dec/2021      
    Ersa FDT439N      
    Ersa Marking Lay-out Implementation 15/Nov/2021       Marking Lay-out Implementation 07/Oct/2022      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration FDT439N      

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