The FFSM0865A from onsemi is a high-performance 650V, 9.6A Silicon Carbide (SiC) Schottky diode, designed for demanding power electronics applications. This surface-mount device features zero reverse recovery time (trr = 0 ns), making it ideal for high-frequency switching circuits where efficiency and thermal management are critical. With a low forward voltage drop (1.75V @ 8A) and minimal reverse leakage current (200 µA @ 650V), it delivers superior performance in high-voltage, high-current environments. The diode is housed in a 4PQFN package and is RoHS3 compliant, ensuring environmental and regulatory adherence.
The FFSM0865A excels in applications requiring high efficiency, fast switching, and thermal stability, including:
The FFSM0865A stands out as a high-efficiency, high-reliability SiC Schottky diode, offering zero recovery losses, high voltage tolerance, and excellent thermal characteristics. Its surface-mount design and compliance with environmental regulations make it a versatile solution for modern power systems. While marked as Last Time Buy, it remains a top-tier option for engineers seeking to optimize performance in high-frequency, high-power applications.
Download datasheets and manufacturer documentation for FFSM0865A