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FQD2N90TM

The FQD2N90TM is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The FQD2N90TM is a high voltage N-channel MOSFET transistor that features a double diffused drain structure. It has a drain-source voltage (Vds) of 900 volts, a continuous drain current (Id) of 2.3A, and a gate-source voltage (Vgs) of ±20 volts. The device is available in a TO-220AB package.

Features:

• High voltage N-channel MOSFET transistor
• Double diffused drain structure
• Vds of 900 volts
• Id of 2.3A
• Vgs of ±20 volts
• Available in a TO-220AB package

Applications:

• Motor control
• Power supplies
• Energy management systems
• Industrial control
• Automotive applications

It's important to note that this is a general description and the specific application and usage of this component will depend on the design and requirements of the circuit it is being used in. It's also important to consider the power dissipation and thermal management of the device when using it in a circuit.