onsemi

FQD7N20LTM

FQD7N20LTM Description

The FQD7N20LTM is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring high efficiency and reliability. With a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 5.5A at 25°C, this device offers robust performance in a wide range of electronic systems. The FQD7N20LTM features a low on-resistance (Rds On) of 750mOhm at 2.75A and 10V, contributing to its high efficiency. The device is also designed for low gate charge (Qg) of 9nC at 5V, which helps reduce switching losses and improve overall performance.

FQD7N20LTM Features

• Technology: MOSFET (Metal Oxide) - Utilizing advanced MOSFET technology for high efficiency and reliability.
• Input Capacitance (Ciss): 500 pF @ 25 V - Minimizes capacitive effects and improves high-frequency performance.
• Gate Charge (Qg): 9 nC @ 5 V - Reduces switching losses and improves efficiency.
• Drain to Source Voltage (Vdss): 200 V - Supports high-voltage applications.
• Power Dissipation: 2.5W (Ta), 45W (Tc) - Suitable for a wide range of power requirements.
• Rds On (Max): 750mOhm @ 2.75A, 10V - Contributes to high efficiency and low power loss.
• Vgs (Max): ±20V - Provides flexibility in gate voltage requirements.
• Moisture Sensitivity Level (MSL): 1 (Unlimited) - Ensures reliable operation in various environmental conditions.
• Mounting Type: Surface Mount - Facilitates easy integration into surface-mount technology (SMT) designs.

FQD7N20LTM Applications

The FQD7N20LTM is ideal for a variety of applications where high efficiency, reliability, and performance are critical:

1. Power Supplies: Its high voltage and current ratings make it suitable for power supply designs, including switching power supplies and battery chargers.
2. Motor Control: The low on-resistance and high current capabilities make it an excellent choice for motor control applications, such as electric vehicles and industrial motor drives.
3. Industrial Automation: The FQD7N20LTM's robust performance and reliability make it suitable for industrial automation systems, including robotics and control systems.
4. RF Power Amplifiers: Its low gate charge and high efficiency make it an ideal choice for RF power amplifiers in communication systems.

Conclusion of FQD7N20LTM

The FQD7N20LTM from onsemi is a powerful and reliable N-Channel MOSFET, offering high efficiency, low on-resistance, and robust performance in a wide range of applications. Its advanced MOSFET technology, combined with its low gate charge and high voltage and current ratings, make it an excellent choice for power supplies, motor control, industrial automation, and RF power amplifiers. With its unique features and advantages over similar models, the FQD7N20LTM is a valuable addition to any electronic design requiring high performance and reliability.