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FQP5N60C Description
FQP5N60C Description
The FQP5N60C is a MOSFET N-CH 600V 4.5A TO220-3 from onsemi, a leading manufacturer in the electronics industry. This single FET is designed for high-performance applications requiring a robust and reliable power semiconductor. With a maximum drain-to-source voltage of 600V and a continuous drain current of 4.5A at 25°C, the FQP5N60C delivers exceptional performance in demanding environments.
FQP5N60C Features
- High Input Capacitance (Ciss): The FQP5N60C boasts a maximum input capacitance of 670 pF at 25V, ensuring fast switching and minimal signal distortion.
- Low Gate Charge (Qg): With a maximum gate charge of 19 nC at 10V, the FQP5N60C minimizes power consumption and heat generation, enhancing efficiency.
- Robust Power Dissipation: Capable of handling up to 100W of power dissipation, the FQP5N60C is ideal for high-power applications.
- Wide Voltage Range: The FQP5N60C operates within a wide voltage range, with a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 4V at 250µA.
- Low Rds On: The FQP5N60C offers a low maximum Rds On of 2.5 Ohms at 2.25A and 10V, ensuring minimal power loss and high efficiency.
- Through Hole Mounting: The FQP5N60C features a through-hole mounting type, providing a secure and reliable connection in various applications.
FQP5N60C Applications
The FQP5N60C is well-suited for a variety of applications, including:
- Power Electronics: Due to its high voltage and current ratings, the FQP5N60C is ideal for power electronics applications such as motor drives, power supplies, and inverters.
- Industrial Control: The FQP5N60C's robust performance makes it suitable for industrial control systems, where reliability and efficiency are critical.
- Automotive Electronics: With its ability to handle high voltages and currents, the FQP5N60C is well-suited for automotive electronics applications, such as electric vehicle charging systems and power management.
Conclusion of FQP5N60C
The FQP5N60C is a high-performance MOSFET from onsemi, offering exceptional technical specifications and performance benefits. Its unique features, such as high input capacitance, low gate charge, and robust power dissipation, make it an ideal choice for a wide range of applications. However, it is important to note that the FQP5N60C is now considered obsolete, which may limit its availability and support. Despite this, its superior performance and reliability make it a valuable component for existing systems and applications that require a high-voltage, high-current MOSFET.



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