onsemi_HGT1S7N60A4DS
original

onsemi
HGT1S7N60A4DS

279-HGT1S7N60A4DS
PDF Datasheet
Insulated Gate Bipolar Transistor

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Tech Specifications

Package/Case
TO-263AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Input Type
STANDARD
Max Collector Current
34A
Max Operating Temperature
150°C
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HGT1S7N60A4DS Description

IGBT 600 V 34 A 125 W Surface Mount TO-263 (D2PAK)

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