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FDD6N20TM

The FDD6N20TM is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in high voltage applications, such as power electronics and motor control.

Description:

The FDD6N20TM is a N-channel enhancement mode field effect transistor. It has a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 2.2A. The device has a low on-state resistance (RDS(on)) of 0.07 Ohms, which makes it suitable for use in low power loss applications.

Features:

• N-channel, enhancement mode
• Max VDS of 600V
• Continuous drain current (ID) of 2.2A
• Low on-state resistance (RDS(on)) of 0.07 Ohms
• Suitable for low power loss applications

Applications:

• Power electronics
• Motor control
• High voltage switching applications
• Industrial control
• Automotive electronics

It's worth mentioning that the FDD6N20TM is a specific part and the applications may vary depending on the design and requirements of the specific project. It's always recommended to check the datasheet and consult with experts in power electronics before using any component in a design.