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FDU6N50TU
278-FDU6N50TU
PDF Datasheet
Power MOSFET, N-Channel, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK, 5040-TUBE
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Tech Specifications
Package/Case
TO-251-3
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
500V
Fall Time
35ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
940pF
FDU6N50TU Description
N-Channel 500 V 6A (Tc) 89W (Tc) Through Hole IPAK
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