onsemi_FDD18N20LZ
original

onsemi
FDD18N20LZ

278-FDD18N20LZ
PDF Datasheet
N-Channel MOSFET, 200V, 16A, 125mR, DPAK, Logic Level
10 Weeks

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Tech Specifications

Package/Case
DPAK
Continuous Drain Current (ID)
16A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
125MR
Element Configuration
Single
Fall Time
50ns
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FDD18N20LZ Description

FDD18N20LZ is a N-Channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power management, and energy conversion systems.

Description:

The FDD18N20LZ is a high voltage, high current N-Channel MOSFET transistor. It features a drain-source voltage (Vds) of 20V, a continuous drain current (Id) of 18A, and a gate-source voltage (Vgs) of ±20V. The device is available in a TO-220AB package, which is suitable for both through-hole and surface-mount applications.

Features:

  • High voltage and current capability: The FDD18N20LZ can handle a drain-source voltage of up to 20V and a continuous drain current of up to 18A.
  • Low on-state resistance: The device has a low on-state resistance (Rds(on)) of 3.5mΩ, which helps to minimize power dissipation and improve efficiency in power electronic applications.
  • Fast switching speed: The FDD18N20LZ has a fast switching speed, with a typical gate charge (Qg) of 42nC and a gate-source charge (Qgs) of 25nC.
  • High temperature operation: The device is rated for operation over a wide temperature range of -55°C to +175°C, making it suitable for use in harsh environments.

Applications:

The FDD18N20LZ is suitable for use in a variety of power electronic applications, including:

  • Motor control: The device can be used in motor control applications, such as brushless DC motor control and stepper motor control.
  • Power management: The FDD18N20LZ can be used in power management applications, such as battery management systems and power supply control.
  • Energy conversion: The device can be used in energy conversion applications, such as solar panel charge controllers and power inverters.
  • Industrial control: The FDD18N20LZ can be used in industrial control applications, such as robotic control and factory automation systems.

Overall, the FDD18N20LZ is a versatile and high-performance N-Channel MOSFET transistor that offers excellent electrical characteristics and a wide range of applications in power electronic systems.

FAQ

What is the standard lead time for FDD18N20LZ?
The standard lead time for FDD18N20LZ is 10 Weeks.
Are there related or alternative parts for FDD18N20LZ?
What package or case is FDD18N20LZ available in?
What is the mounting type of FDD18N20LZ?
What operating temperature range does FDD18N20LZ support?
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