onsemi_MJB44H11G

onsemi
MJB44H11G  
Single Bipolar Transistors

onsemi
MJB44H11G
276-MJB44H11G
Ersa
onsemi-MJB44H11G-datasheets-58481.pdf
TRANS NPN 80V 10A D2PAK
In Stock : 9866

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MJB44H11G Description

MJB44H11G Description

The MJB44H11G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for demanding power-switching and amplification applications. Encased in a robust D2PAK (TO-263) surface-mount package, this transistor offers a collector-emitter voltage (Vce) rating of 80V and a maximum collector current (Ic) of 10A, making it suitable for medium-to-high-power circuits. With a transition frequency (ft) of 50MHz, it ensures efficient operation in high-speed switching scenarios. The device exhibits a low Vce saturation voltage of 1V at 8A (Ib=400mA), minimizing power losses and enhancing thermal performance. Its DC current gain (hFE) of 40 at 4A/1V provides stable amplification characteristics. Compliant with ROHS3 and REACH standards, the MJB44H11G is ideal for environmentally conscious designs.

MJB44H11G Features

  • High Voltage & Current Handling: 80V Vce and 10A Ic support robust power management.
  • Low Saturation Voltage: 1V @ 8A reduces conduction losses, improving efficiency.
  • Fast Switching: 50MHz transition frequency enables high-speed operation.
  • Surface-Mount Design: D2PAK package ensures compact PCB integration and thermal dissipation.
  • Reliable Performance: DC current gain (hFE) of 40 @ 4A/1V ensures consistent amplification.
  • Compliance: ROHS3, REACH, and EAR99 certifications for global usability.
  • Wide Operating Range: Suitable for industrial and automotive environments (MSL 1 unlimited).

MJB44H11G Applications

The MJB44H11G excels in:

  • Power Supplies: Switching regulators, DC-DC converters, and linear amplifiers.
  • Motor Control: Driver circuits for brushed DC motors and solenoids.
  • Automotive Systems: Engine control units (ECUs), lighting, and load switches.
  • Industrial Equipment: Relay drivers, inverters, and high-current switching modules.
  • Audio Amplifiers: High-fidelity output stages due to low distortion.

Conclusion of MJB44H11G

The MJB44H11G stands out as a versatile, high-efficiency NPN transistor, combining high voltage/current ratings, fast switching, and low saturation losses. Its D2PAK package and compliance with stringent environmental standards make it a preferred choice for power electronics, automotive, and industrial applications. Engineers can leverage its reliability and performance to optimize system efficiency and reduce thermal management overhead. For designs requiring a balance of power, speed, and compactness, the MJB44H11G delivers exceptional value.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
SVHC
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
SVHC Exceeds Threshold
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Tab
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

MJB44H11G Documents

Download datasheets and manufacturer documentation for MJB44H11G

Ersa Assembly/Test 12/Oct/2023      
Ersa MJB(44,45)H11      
Ersa MJB(44,45)H11      
Ersa Mult Dev Material Chg 2/Oct/2018       Cancellation 13/Aug/2020      
Ersa onsemi RoHS       Material Declaration MJB44H11G       onsemi REACH      

Shopping Guide

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