The MJB44H11G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for demanding power-switching and amplification applications. Encased in a robust D2PAK (TO-263) surface-mount package, this transistor offers a collector-emitter voltage (Vce) rating of 80V and a maximum collector current (Ic) of 10A, making it suitable for medium-to-high-power circuits. With a transition frequency (ft) of 50MHz, it ensures efficient operation in high-speed switching scenarios. The device exhibits a low Vce saturation voltage of 1V at 8A (Ib=400mA), minimizing power losses and enhancing thermal performance. Its DC current gain (hFE) of 40 at 4A/1V provides stable amplification characteristics. Compliant with ROHS3 and REACH standards, the MJB44H11G is ideal for environmentally conscious designs.
The MJB44H11G excels in:
The MJB44H11G stands out as a versatile, high-efficiency NPN transistor, combining high voltage/current ratings, fast switching, and low saturation losses. Its D2PAK package and compliance with stringent environmental standards make it a preferred choice for power electronics, automotive, and industrial applications. Engineers can leverage its reliability and performance to optimize system efficiency and reduce thermal management overhead. For designs requiring a balance of power, speed, and compactness, the MJB44H11G delivers exceptional value.
Download datasheets and manufacturer documentation for MJB44H11G