onsemi_MJD45H11RLG

onsemi
MJD45H11RLG  
Single Bipolar Transistors

onsemi
MJD45H11RLG
276-MJD45H11RLG
Ersa
onsemi-MJD45H11RLG-datasheets-11326255.pdf
TRANS PNP 80V 8A DPAK
In Stock : 10098

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    MJD45H11RLG Description

    MJD45H11RLG Description

    The MJD45H11RLG is a high-performance PNP bipolar transistor designed and manufactured by onsemi. With a frequency transition of 90MHz, it offers superior performance in high-frequency applications. The device is capable of handling a maximum collector current (Ic) of 8A, making it suitable for high-power applications. The Vce saturation (Max) at Ib, Ic is 1V @ 400mA, 8A, ensuring efficient operation at high currents. The MJD45H11RLG is designed for surface mount applications, making it ideal for compact and space-constrained designs.

    MJD45H11RLG Features

    • 90MHz frequency transition for high-speed performance
    • 8A maximum collector current (Ic) for high-power applications
    • 1V Vce saturation (Max) @ 400mA, 8A for efficient operation
    • Surface mount design for compact and space-constrained applications
    • 80V maximum collector-emitter breakdown voltage for reliable operation
    • DPAK package for efficient heat dissipation
    • 1.75W maximum power rating for high-power applications
    • 40 minimum DC current gain (hFE) @ 4A, 1V for consistent performance
    • Moisture Sensitivity Level (MSL) 1 for unlimited storage time
    • REACH unaffected and RoHS3 compliant for environmental compliance

    MJD45H11RLG Applications

    The MJD45H11RLG is ideal for a wide range of applications, including:

    1. Switching and amplification in power electronics
    2. High-frequency communication systems
    3. Automotive electronics, such as ignition control and powertrain management
    4. Industrial control systems, including motor control and power distribution
    5. Consumer electronics, such as audio amplifiers and power supplies

    Conclusion of MJD45H11RLG

    The MJD45H11RLG is a versatile and high-performance PNP bipolar transistor that offers excellent technical specifications and performance benefits. Its unique features, such as high-frequency transition, high collector current, and efficient Vce saturation, make it an ideal choice for a wide range of applications in power electronics, communication systems, automotive electronics, industrial control systems, and consumer electronics. With its compact surface mount design, the MJD45H11RLG is perfect for space-constrained designs while maintaining high performance and reliability.

    Tech Specifications

    Configuration
    PPAP
    Maximum Base Emitter Saturation Voltage (V)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    SVHC
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    SVHC Exceeds Threshold
    Vce Saturation (Max) @ Ib, Ic
    Material
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Operating Junction Temperature (°C)
    Tab
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Unit Weight
    Continuous Collector Current
    RoHS
    Maximum DC Collector Current
    Technology
    Collector-Emitter Saturation Voltage
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Width
    Mounting Style
    Transistor Polarity
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Length
    Gain Bandwidth Product fT
    Collector- Emitter Voltage VCEO Max
    Pd - Power Dissipation
    USHTS

    MJD45H11RLG Documents

    Download datasheets and manufacturer documentation for MJD45H11RLG

    Ersa Assembly /Test Change 11/Apr/2023      
    Ersa NJVMJD45H11RLG Datasheet      
    Ersa onsemi RoHS       Material Declaration MJD45H11RLG       onsemi REACH      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service