onsemi

MMBT4403WT1G  

Single Bipolar Transistors

MMBT4403WT1G Description

The MMBT4403WT1G is a high-performance PNP bipolar transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and is known for its robust technical specifications and reliable performance. With a maximum collector current of 600 mA and a collector-emitter breakdown voltage of 40 V, the MMBT4403WT1G is well-suited for various applications requiring high power and voltage handling capabilities.

MMBT4403WT1G Features

• Frequency - Transition: 200 MHz, ensuring fast switching speeds and high-frequency operation.
• Current - Collector (Ic) (Max): 600 mA, providing ample current handling capacity for various electronic circuits.
• Vce Saturation (Max) @ Ib, Ic: 750 mV @ 50mA, 500mA, indicating low saturation voltage for efficient power management.
• Voltage - Collector Emitter Breakdown (Max): 40 V, allowing the device to handle high voltages without breaking down.
• Power - Max: 150 mW, enabling the transistor to dissipate heat effectively and maintain stable operation.
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, ensuring consistent performance across different operating conditions.
• Mounting Type: Surface Mount, facilitating easy integration into compact and space-constrained designs.
• RoHS Status: ROHS3 Compliant, adhering to environmental regulations and promoting sustainable manufacturing practices.

MMBT4403WT1G Applications

The MMBT4403WT1G is an ideal choice for applications that demand high power, voltage, and current handling capabilities. Some specific use cases include:

1. Power Amplifiers: Due to its high power dissipation and voltage handling capabilities, the MMBT4403WT1G is well-suited for use in power amplifiers, where it can efficiently amplify signals without distortion.
2. Switching Regulators: The device's low saturation voltage and high current handling make it an excellent choice for switching regulators, where it can efficiently manage power distribution in electronic circuits.
3. RF Applications: With a transition frequency of 200 MHz, the MMBT4403WT1G can be used in RF applications requiring high-frequency signal processing and amplification.

Conclusion of MMBT4403WT1G

The MMBT4403WT1G is a versatile and high-performance PNP bipolar transistor that offers a unique combination of technical specifications and performance benefits. Its ability to handle high power, voltage, and current, along with its compliance with environmental regulations, makes it an ideal choice for a wide range of applications. By leveraging the MMBT4403WT1G, designers can create more efficient, reliable, and sustainable electronic systems.

MMBT4403WT1G Documents

Download datasheets and manufacturer documentation for MMBT4403WT1G

EOL :

On Semiconductor - EOL 5-17-10 (PDF)      

PCN :

ON Semiconductor - PCN 6-2-10 (PDF)       General Announcement - 2D Barcoding (PDF)       Temporary Suspension of ISO 9001 Certification for Hitachi Chemical Co., Ltd.       On Semiconductor - PCN 5-21-10 (PDF)       Product Change Notification (PDF)