onsemi_MSD42SWT1G

onsemi
MSD42SWT1G  
Single Bipolar Transistors

onsemi
MSD42SWT1G
276-MSD42SWT1G
Ersa
onsemi-MSD42SWT1G-datasheets-6756824.pdf
TRANS NPN 300V 0.15A SC70-3
In Stock : 3200

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MSD42SWT1G Description

MSD42SWT1G Description

The MSD42SWT1G is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and offers a range of impressive technical specifications that make it suitable for various applications. With an operating temperature of 150°C (TJ) and a maximum collector current of 150 mA, the MSD42SWT1G is designed to deliver reliable performance in demanding environments.

MSD42SWT1G Features

  • Technical Specifications:

    • Operating Temperature: 150°C (TJ)
    • Maximum Collector Current (Ic): 150 mA
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 200mA
    • Voltage - Collector Emitter Breakdown (Max): 300 V
    • Maximum Power: 150 mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Surface Mount technology for easy integration into modern electronic designs
    • RoHS3 compliant, making it suitable for environmentally friendly applications
    • REACH Unaffected status, ensuring compliance with European chemical regulations
    • Active product status, ensuring ongoing availability and support

MSD42SWT1G Applications

The MSD42SWT1G's unique combination of high temperature operation, low power consumption, and high breakdown voltage make it ideal for a variety of applications, including:

  • Automotive Electronics: Due to its high temperature tolerance and robust performance, the MSD42SWT1G is well-suited for use in automotive electronics, such as engine control modules and power management systems.
  • Industrial Control Systems: Its ability to handle high temperatures and high voltages makes it an excellent choice for industrial control systems, where reliability and performance are critical.
  • Power Management: The MSD42SWT1G's low power consumption and high current handling capabilities make it suitable for power management applications in various electronic devices.

Conclusion of MSD42SWT1G

In conclusion, the MSD42SWT1G is a versatile and high-performance NPN bipolar transistor that offers a range of technical specifications and performance benefits that make it suitable for a variety of applications. Its unique features, such as high temperature operation and low power consumption, set it apart from similar models and make it an ideal choice for demanding applications in automotive, industrial, and power management sectors.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

MSD42SWT1G Documents

Download datasheets and manufacturer documentation for MSD42SWT1G

Ersa MSD42SWT1      
Ersa MSD42SWT1      
Ersa Copper Wire 29/Oct/2009      
Ersa onsemi RoHS       Material Declaration MSD42SWT1G      

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