onsemi_MMBT5087LT1G
MMBT5087LT1G(1)
MMBT5087LT1G(2)
MMBT5087LT1G(3)
MMBT5087LT1G(4)

onsemi
MMBT5087LT1G  
Single Bipolar Transistors

onsemi
MMBT5087LT1G
276-MMBT5087LT1G
Ersa
onsemi-MMBT5087LT1G-datasheets-3222144.pdf
TRANS PNP 50V 0.05A SOT23-3
In Stock : 72398

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MMBT5087LT1G Description

MMBT5087LT1G Description

The MMBT5087LT1G is a high-performance PNP bipolar transistor offered by onsemi, designed for a wide range of electronic applications. This device is characterized by its 40MHz transition frequency, making it suitable for high-speed switching applications. With a maximum collector current (Ic) of 50 mA and a collector-emitter breakdown voltage of 50V, the MMBT5087LT1G can handle moderate power levels while maintaining reliability in various operating conditions.

MMBT5087LT1G Features

  • High-Speed Switching: The 40MHz transition frequency allows for rapid switching in high-speed digital circuits.
  • Robust Current Handling: Capable of handling up to 50 mA of collector current, making it suitable for medium power applications.
  • Low Saturation Voltage: With a Vce(sat) of just 300mV at 1mA and 10mA, the MMBT5087LT1G offers efficient operation in low-voltage circuits.
  • Surface Mount Technology: The SOT23-3 package facilitates surface mounting, ideal for space-constrained designs.
  • Compliance: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
  • DC Current Gain: A minimum hFE of 250 at 100µA and 5V ensures consistent performance across different operating points.

MMBT5087LT1G Applications

The MMBT5087LT1G's combination of speed, power handling, and low saturation voltage makes it ideal for:

  • Automotive Electronics: For use in control systems and power management circuits within vehicles.
  • Industrial Controls: In high-speed switching applications where reliability and efficiency are critical.
  • Consumer Electronics: For use in power amplifiers, signal processing, and other high-speed digital circuits within consumer devices.
  • Communications Equipment: In transceivers and other high-frequency communication devices.

Conclusion of MMBT5087LT1G

The MMBT5087LT1G stands out due to its balance of speed, power, and efficiency, making it a versatile choice for a variety of applications. Its compliance with environmental standards and robust performance specifications position it as a reliable component in the design of modern electronic systems. With its unique blend of features, the MMBT5087LT1G is an excellent choice for engineers seeking a PNP transistor that delivers on performance and reliability.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

MMBT5087LT1G Documents

Download datasheets and manufacturer documentation for MMBT5087LT1G

Ersa Mold Compound 02/Apr/2020      
Ersa MMBT5087LT      
Ersa Transistor Technical Basics      
Ersa MMBT5087LT      
Ersa SOT23 16/Sep/2016       Copper Wire 19/May/2010      
Ersa onsemi RoHS       Material Declaration MMBT5087LT1G      

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