onsemi

MMUN2212LT1G

MMUN2212LT1G Description

The MMUN2212LT1G is a pre-biased NPN bipolar transistor offered by onsemi. It is designed to provide high performance in a compact SOT23-3 package. With a maximum collector current of 100 mA, this device is suitable for a wide range of applications. The MMUN2212LT1G features a low Vce saturation of 250mV at 10mA, ensuring efficient operation in low-voltage circuits. It also has a high DC current gain (hFE) of 60 at 5mA and 10V, providing excellent signal amplification.

MMUN2212LT1G Features

• Maximum collector current (Ic) of 100 mA
• Low Vce saturation of 250mV at 10mA
• High DC current gain (hFE) of 60 at 5mA and 10V
• Maximum collector-emitter breakdown voltage of 50V
• Maximum power dissipation of 246 mW
• RoHS3 compliant and REACH unaffected
• Moisture sensitivity level (MSL) of 1 (unlimited)
• Surface mount packaging in tape & reel (TR)

MMUN2212LT1G Applications

The MMUN2212LT1G is ideal for a variety of applications due to its high performance and compact size. Some specific use cases include:

1. Low-voltage signal amplification in consumer electronics
2. Biasing circuits in communication systems
3. Switching applications in automotive electronics
4. General-purpose amplification in industrial control systems

Conclusion of MMUN2212LT1G

The MMUN2212LT1G is a high-performance, pre-biased NPN bipolar transistor that offers excellent signal amplification and low power consumption. Its compact SOT23-3 package makes it suitable for a wide range of applications, including low-voltage signal amplification, biasing circuits, and switching applications. With its RoHS3 compliance and REACH unaffected status, the MMUN2212LT1G is an environmentally friendly choice for your electronic design needs.