The MMUN2212LT1G is a pre-biased NPN bipolar transistor offered by onsemi. It is designed to provide high performance in a compact SOT23-3 package. With a maximum collector current of 100 mA, this device is suitable for a wide range of applications. The MMUN2212LT1G features a low Vce saturation of 250mV at 10mA, ensuring efficient operation in low-voltage circuits. It also has a high DC current gain (hFE) of 60 at 5mA and 10V, providing excellent signal amplification.
The MMUN2212LT1G is ideal for a variety of applications due to its high performance and compact size. Some specific use cases include:
The MMUN2212LT1G is a high-performance, pre-biased NPN bipolar transistor that offers excellent signal amplification and low power consumption. Its compact SOT23-3 package makes it suitable for a wide range of applications, including low-voltage signal amplification, biasing circuits, and switching applications. With its RoHS3 compliance and REACH unaffected status, the MMUN2212LT1G is an environmentally friendly choice for your electronic design needs.
Download datasheets and manufacturer documentation for MMUN2212LT1G