onsemi_NTNUS3171PZT5G

onsemi
NTNUS3171PZT5G  
Single FETs, MOSFETs

onsemi
NTNUS3171PZT5G
278-NTNUS3171PZT5G
Ersa
onsemi-NTNUS3171PZT5G-datasheets-1519479.pdf
MOSFET P-CH 20V 150MA SOT1123
In Stock : 6151

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NTNUS3171PZT5G Description

NTNUS3171PZT5G Description

The NTNUS3171PZT5G is a MOSFET P-CH 20V 150mA SOT1123 device manufactured by onsemi. This single FET is designed for high-performance applications requiring low power dissipation and high input capacitance. With a maximum drain-to-source voltage of 20V and a continuous drain current of 150mA at 25°C, the NTNUS3171PZT5G offers reliable performance in various electronic systems.

NTNUS3171PZT5G Features

  • Technology: MOSFET (Metal Oxide)
  • Input Capacitance (Ciss): 13 pF @ 15V
  • Drain to Source Voltage (Vdss): 20V
  • Power Dissipation (Max): 125mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.21.0095
  • Base Product Number: NTNUS3171

NTNUS3171PZT5G Applications

The NTNUS3171PZT5G is ideal for use in various electronic applications where high performance and reliability are required. Some specific use cases include:

  1. Power Management: The device's low power dissipation and high input capacitance make it suitable for power management applications in consumer electronics and industrial systems.
  2. Signal Processing: The MOSFET's high input capacitance and low drain-to-source voltage make it ideal for signal processing applications, such as audio amplifiers and filters.
  3. Automotive Electronics: The device's robust performance and compliance with environmental regulations make it suitable for automotive electronics, such as engine control units and infotainment systems.

Conclusion of NTNUS3171PZT5G

The NTNUS3171PZT5G is a high-performance MOSFET P-CH 20V 150mA SOT1123 device designed for demanding applications requiring low power dissipation and high input capacitance. With its unique features and advantages, such as low Rds On, high Vdss, and compliance with environmental regulations, the NTNUS3171PZT5G is an ideal choice for power management, signal processing, and automotive electronics applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Series
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NTNUS3171PZT5G Documents

Download datasheets and manufacturer documentation for NTNUS3171PZT5G

Ersa NTNUS3171PZ      
Ersa Mult Dev EOL 03/Jul/2023      
Ersa NTNUS3171PZ      
Ersa Mult Devices Tape Design 06/Mar/2018      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NTNUS3171PZT5G      

Shopping Guide

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