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AUIRF4905

AUIRF4905 Description

The AUIRF4905 is a high-performance MOSFET P-CH 55V 74A TO220AB from Infineon Technologies, a leading manufacturer in the electronics industry. This Single FET is designed for high-power applications and offers exceptional performance benefits. With a maximum drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 74A at 25°C, the AUIRF4905 is well-suited for demanding applications.

AUIRF4905 Features

• Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power loss.
• Input Capacitance (Ciss): 3400 pF @ 25V - Minimizes input capacitance for faster switching.
• Gate Charge (Qg): 180 nC @ 10V - Reduces switching losses and improves efficiency.
• Drain to Source Voltage (Vdss): 55V - Suitable for high-voltage applications.
• Power Dissipation (Max): 200W (Tc) - Capable of handling high power dissipation.
• Rds On (Max): 20mOhm @ 38A, 10V - Offers low on-resistance for minimal power loss.
• Vgs(th) (Max): 4V @ 250µA - Ensures reliable threshold voltage performance.
• Mounting Type: Through Hole - Facilitates easy integration into existing designs.
• Package: Tube - Provides protection and convenience during handling and storage.

AUIRF4905 Applications

The AUIRF4905 is ideal for a variety of high-power applications, including:

1. Power Supplies: Due to its high drain-source voltage and low on-resistance, the AUIRF4905 is well-suited for power supply designs.
2. Motor Controls: The high current rating and low on-resistance make it an excellent choice for motor control applications.
3. Industrial Automation: The robust performance and high power dissipation capabilities make it suitable for industrial automation systems.

Conclusion of AUIRF4905

The AUIRF4905 is a high-performance MOSFET from Infineon Technologies, offering exceptional technical specifications and performance benefits. Its unique features, such as low input capacitance, low gate charge, and high power dissipation, make it an ideal choice for high-power applications. While it is now considered obsolete, its superior performance and reliability make it a valuable option for existing designs that require a high-performance MOSFET.