The IPD50R500CEAUMA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. Part of the CoolMOS™ CE series, it features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.6A at 25°C, making it suitable for high-voltage switching. With a low on-resistance (Rds(on)) of 500mΩ at 2.3A and 13V gate drive, it ensures efficient power conversion with minimal losses. The device is housed in a TO-252 (DPAK) package, optimized for surface-mount applications, and is available in Tape & Reel (TR) packaging for automated assembly.
This MOSFET is ideal for:
The IPD50R500CEAUMA1 combines high voltage tolerance, low conduction losses, and fast switching in a compact surface-mount package. Its CoolMOS™ CE technology ensures superior thermal performance, making it a standout choice for energy-efficient designs. Whether in industrial, automotive, or renewable energy applications, this MOSFET delivers reliability, efficiency, and scalability for next-generation power systems.
Download datasheets and manufacturer documentation for IPD50R500CEAUMA1