Infineon Technologies_IPD50R500CEAUMA1

Infineon Technologies
IPD50R500CEAUMA1  
Single FETs, MOSFETs

IPD50R500CEAUMA1
278-IPD50R500CEAUMA1
Ersa
Infineon Technologies-IPD50R500CEAUMA1-datasheets-8426526.pdf
MOSFET N-CH 500V 7.6A TO252
In Stock : 4015

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IPD50R500CEAUMA1 Description

IPD50R500CEAUMA1 Description

The IPD50R500CEAUMA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. Part of the CoolMOS™ CE series, it features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.6A at 25°C, making it suitable for high-voltage switching. With a low on-resistance (Rds(on)) of 500mΩ at 2.3A and 13V gate drive, it ensures efficient power conversion with minimal losses. The device is housed in a TO-252 (DPAK) package, optimized for surface-mount applications, and is available in Tape & Reel (TR) packaging for automated assembly.

IPD50R500CEAUMA1 Features

  • High Voltage & Current Handling: 500V Vdss and 7.6A Id for robust performance in power circuits.
  • Low Rds(on): 500mΩ @ 13V Vgs reduces conduction losses, improving efficiency.
  • Fast Switching: Low gate charge (Qg = 18.7nC @ 10V) and input capacitance (Ciss = 433pF @ 100V) enable high-frequency operation.
  • Thermal Efficiency: Maximum power dissipation of 57W (Tc) ensures reliability under high loads.
  • Wide Gate Drive Range: Supports ±20V Vgs, offering flexibility in drive circuitry.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 3 (168 hours) rated for extended shelf life.

IPD50R500CEAUMA1 Applications

This MOSFET is ideal for:

  • Switch-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Industrial Power Systems: Motor drives, inverters, and UPS systems.
  • Renewable Energy: Solar inverters and wind power converters.
  • Automotive Electronics: On-board chargers and LED drivers.
  • Consumer Electronics: High-efficiency adapters and power tools.

Conclusion of IPD50R500CEAUMA1

The IPD50R500CEAUMA1 combines high voltage tolerance, low conduction losses, and fast switching in a compact surface-mount package. Its CoolMOS™ CE technology ensures superior thermal performance, making it a standout choice for energy-efficient designs. Whether in industrial, automotive, or renewable energy applications, this MOSFET delivers reliability, efficiency, and scalability for next-generation power systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Moisture Sensitive
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

IPD50R500CEAUMA1 Documents

Download datasheets and manufacturer documentation for IPD50R500CEAUMA1

Ersa IPD50R500CE Datasheet      
Ersa Part Number Guide      
Ersa IPD50R500CE Datasheet      
Ersa CoolMOS™ Power MOSFET 500V C3 Spice Model      
Ersa RoHS Certificate      

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