onsemi

MMUN2235LT1G  

Single, Pre-Biased Bipolar Transistors

MMUN2235LT1G Description

The MMUN2235LT1G is a pre-biased NPN bipolar transistor offered by onsemi. It is designed for single applications and is packaged in a compact SOT23-3 package. This device is known for its high performance and reliability, making it ideal for various electronic applications. With a maximum collector current of 100 mA, a collector-emitter breakdown voltage of 50 V, and a maximum power dissipation of 246 mW, the MMUN2235LT1G delivers excellent electrical performance.

MMUN2235LT1G Features

• Technical Specifications:

  • Maximum Collector Current (Ic): 100 mA
  • Collector-Emitter Breakdown Voltage (Vce): 50 V
  • Maximum Power Dissipation: 246 mW
  • DC Current Gain (hFE): Min 80 @ 5mA, 10V
  • Base-Emitter On Resistance (R1): 2.2 kOhms
  • Emitter-Base On Resistance (R2): 47 kOhms
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current-Collector Cutoff (Max): 500nA

• Performance Benefits:

  • Surface Mount technology for easy integration into modern electronic designs
  • Pre-biased design simplifies the biasing process and reduces design complexity
  • Low Vce saturation voltage for improved efficiency in low-voltage applications
  • Moisture Sensitivity Level (MSL) 1, allowing for unlimited storage time

• Unique Advantages:

  • Active product status, ensuring ongoing availability and support
  • REACH Unaffected and RoHS3 compliant, meeting environmental regulations
  • EAR99 and HTSUS 8541.21.0095 classifications for easy international trade

MMUN2235LT1G Applications

The MMUN2235LT1G is ideal for a variety of applications where a pre-biased NPN bipolar transistor is required. Some specific use cases include:

• Low-voltage switching applications: The low Vce saturation voltage makes it suitable for efficient switching in low-voltage circuits.
• Audio amplifiers: The device's high current gain and low noise characteristics make it suitable for audio amplification tasks.
• RF applications: The MMUN2235LT1G's high breakdown voltage and low noise figure make it suitable for use in RF circuits.
• Automotive electronics: The device's reliability and robustness make it suitable for use in automotive electronics, such as ignition systems and sensor interfaces.

Conclusion of MMUN2235LT1G

The MMUN2235LT1G is a high-performance, pre-biased NPN bipolar transistor that offers excellent electrical characteristics and reliability. Its compact SOT23-3 package and pre-biased design make it ideal for a wide range of applications, including low-voltage switching, audio amplification, and RF circuits. With its active product status, REACH and RoHS compliance, and favorable trade classifications, the MMUN2235LT1G is a reliable choice for designers looking for a high-quality pre-biased NPN transistor.

MMUN2235LT1G Documents

Download datasheets and manufacturer documentation for MMUN2235LT1G

PCN Assembly/Origin :

Mold Compound 02/Apr/2020      

Datasheets :

MUN2235, MUN5235, DTC123Jxx, NSBC123JF3      

HTML Datasheet :

MUN2235, MUN5235, DTC123Jxx, NSBC123JF3      

PCN Design/Specification :

SOT23 16/Sep/2016       Copper Wire Update 10/Sep/2015      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration MMUN2235LT1G