onsemi_MTP2P50E

onsemi
MTP2P50E  
Single FETs, MOSFETs

onsemi
MTP2P50E
278-MTP2P50E
Ersa
onsemi-MTP2P50E-datasheets-8611064.pdf
MOSFET P-CH 500V 2A TO220AB
In Stock : 802

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MTP2P50E Description

MTP2P50E Description

The MTP2P50E from onsemi is a P-channel MOSFET designed for high-voltage switching applications, featuring a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C. This obsolete but robust component is housed in a TO-220AB package, making it suitable for through-hole mounting in power electronics. With an input capacitance (Ciss) of 1183 pF @ 25V and a gate charge (Qg) of 27 nC @ 10V, it offers efficient switching performance. The device operates with a gate-source voltage (Vgs) range of ±20V and exhibits a threshold voltage (Vgs(th)) of 4V @ 250µA, ensuring reliable turn-on characteristics.

MTP2P50E Features

  • High Voltage Rating: 500V Vdss makes it ideal for industrial and automotive applications.
  • Low On-Resistance: 6Ω @ 1A, 10V minimizes conduction losses.
  • Robust Thermal Performance: 75W power dissipation (Tc) ensures stability under high-load conditions.
  • Wide Vgs Range: ±20V allows flexibility in drive circuitry design.
  • REACH Unaffected: Compliant with environmental regulations, suitable for global markets.
  • Low Gate Charge: 27 nC enhances switching efficiency, reducing power losses in high-frequency applications.

MTP2P50E Applications

The MTP2P50E is particularly suited for:

  • Power Supplies: High-voltage DC-DC converters and offline SMPS.
  • Industrial Systems: Motor drives, inverters, and relay replacements.
  • Automotive Electronics: Auxiliary power systems and load switches.
  • Energy Management: Solar inverters and battery protection circuits.
    Its high voltage tolerance and low conduction losses make it a preferred choice for designs requiring efficient power handling in harsh environments.

Conclusion of MTP2P50E

While marked as obsolete, the MTP2P50E remains a reliable P-channel MOSFET for high-voltage applications, offering a balance of performance, thermal stability, and switching efficiency. Its TO-220AB package ensures ease of integration, and its low gate charge enhances energy efficiency. Engineers working on legacy systems or seeking cost-effective solutions for industrial, automotive, or power management applications may still find this component valuable. For newer designs, consulting onsemi's latest offerings is recommended to ensure optimal performance and availability.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

MTP2P50E Documents

Download datasheets and manufacturer documentation for MTP2P50E

Ersa MTP2P50E      
Ersa Multiple Devices 03/Jan/2008      
Ersa MTP2P50E      
Ersa onsemi RoHS       onsemi REACH      

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