The MTP2P50E from onsemi is a P-channel MOSFET designed for high-voltage switching applications, featuring a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C. This obsolete but robust component is housed in a TO-220AB package, making it suitable for through-hole mounting in power electronics. With an input capacitance (Ciss) of 1183 pF @ 25V and a gate charge (Qg) of 27 nC @ 10V, it offers efficient switching performance. The device operates with a gate-source voltage (Vgs) range of ±20V and exhibits a threshold voltage (Vgs(th)) of 4V @ 250µA, ensuring reliable turn-on characteristics.
The MTP2P50E is particularly suited for:
While marked as obsolete, the MTP2P50E remains a reliable P-channel MOSFET for high-voltage applications, offering a balance of performance, thermal stability, and switching efficiency. Its TO-220AB package ensures ease of integration, and its low gate charge enhances energy efficiency. Engineers working on legacy systems or seeking cost-effective solutions for industrial, automotive, or power management applications may still find this component valuable. For newer designs, consulting onsemi's latest offerings is recommended to ensure optimal performance and availability.
Download datasheets and manufacturer documentation for MTP2P50E