onsemi

NSBC114EDXV6T1G  

Bipolar Transistor Arrays, Pre-Biased

NSBC114EDXV6T1G Description

The NSBC114EDXV6T1G is a high-performance, pre-biased 2NPN bipolar transistor array from onsemi, designed for a wide range of applications in the electronics industry. This device offers a unique combination of technical specifications and performance benefits, making it an ideal choice for various applications.

NSBC114EDXV6T1G Features

• Technical Specifications:

  • Maximum Collector Current (Ic): 100mA
  • Base Resistor (R1): 10kOhms
  • Emitter Base Resistor (R2): 10kOhms
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Maximum Power: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Maximum Collector Cutoff Current: 500nA
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

• Performance Benefits:

  • Surface Mount technology for efficient packaging and easy integration
  • Active product status, ensuring ongoing availability and support
  • REACH Unaffected and ROHS3 Compliant, meeting environmental and safety standards

• Unique Features and Advantages:

  • Pre-biased design simplifies circuit design and reduces external component requirements
  • High current gain and low saturation voltage for improved performance in switching applications
  • Robust breakdown voltage and power handling capabilities

NSBC114EDXV6T1G Applications

The NSBC114EDXV6T1G is ideal for a variety of applications where high performance, reliability, and ease of integration are critical. Some specific use cases include:

• Automotive Electronics: Utilized in power windows, door locks, and other electronic control systems
• Industrial Controls: Employed in motor drives, relays, and solenoid controls
• Consumer Electronics: Found in power supplies, audio amplifiers, and battery management systems
• Telecommunications: Used in signal conditioning and power management circuits

Conclusion of NSBC114EDXV6T1G

The NSBC114EDXV6T1G from onsemi is a versatile and high-performing pre-biased 2NPN bipolar transistor array. Its unique combination of technical specifications, performance benefits, and environmental compliance make it an excellent choice for a wide range of applications in the electronics industry. With its pre-biased design, the NSBC114EDXV6T1G simplifies circuit design and reduces external component requirements, making it an ideal solution for engineers looking to optimize their designs for performance and reliability.

NSBC114EDXV6T1G Documents

Download datasheets and manufacturer documentation for NSBC114EDXV6T1G

PCN Assembly/Origin :

Mult Dev 24/Apr/2020      

Datasheets :

MUN5211DW1, NSBC114EDxx      

PCN Packaging :

Mult Devices 27/Oct/2017       Carrier Tape 15/Aug/2017      

HTML Datasheet :

MUN5211DW1, NSBC114EDxx      

PCN Design/Specification :

Wire Bond 01/Dec/2010      

Environmental Information :

onsemi RoHS       Material Declaration NSBC114EDXV6T1G