onsemi_NTH027N65S3F-F155

onsemi
NTH027N65S3F-F155  
Single FETs, MOSFETs

onsemi
NTH027N65S3F-F155
278-NTH027N65S3F-F155
Ersa
onsemi-NTH027N65S3F-F155-datasheets-9086460.pdf
MOSFET N-CH 650V 75A TO247-3
In Stock : 1226

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NTH027N65S3F-F155 Description

NTH027N65S3F-F155 Description

The NTH027N65S3F-F155 is a high-performance N-Channel MOSFET from onsemi, designed for demanding applications that require robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 75A at 25°C, this device is well-suited for a variety of high-power electronics.

NTH027N65S3F-F155 Features

  • Technology: Utilizing onsemi's advanced MOSFET technology, the NTH027N65S3F-F155 offers superior performance and reliability.
  • Input Capacitance (Ciss): With a maximum input capacitance of 7690 pF at 400V, this MOSFET ensures fast switching and minimal signal distortion.
  • Gate Charge (Qg): The maximum gate charge of 259 nC at 10V contributes to efficient power usage and reduced switching losses.
  • Rds On (Max): The low on-resistance of 27.4 mOhm at 35A and 10V ensures minimal power dissipation and high efficiency.
  • Power Dissipation: Capable of handling up to 595W of power dissipation, making it ideal for high-power applications.
  • Mounting Type: The through-hole mounting type provides a secure and reliable connection in various circuit configurations.
  • Package: The TO247-3 package is designed for easy integration into existing designs.

NTH027N65S3F-F155 Applications

The NTH027N65S3F-F155 is ideal for applications that demand high power and efficient switching, such as:

  • Power Supplies: Its high voltage and current ratings make it suitable for power supply designs.
  • Motor Controls: The device's robust performance is well-suited for motor control applications, providing efficient power management.
  • Industrial Automation: In industrial settings, the NTH027N65S3F-F155 can handle the rigors of high-power switching and control.

Conclusion of NTH027N65S3F-F155

The NTH027N65S3F-F155 from onsemi is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current ratings with low on-resistance. Its advanced technology and robust performance make it an excellent choice for high-power applications in power supplies, motor controls, and industrial automation. Despite being marked as "Not For New Designs," it remains a reliable option for existing designs that require its specific capabilities.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NTH027N65S3F-F155 Documents

Download datasheets and manufacturer documentation for NTH027N65S3F-F155

Ersa Mult Dev 16/Aug/2023      
Ersa NTH027N65S3F      
Ersa Packing quantity increase 28/Dec/2020      
Ersa NTH027N65S3F      
Ersa SuperFet Datasheet Chg 30/Jul/2019       Dimension/Color Change 24/Feb/2021      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NTH027N65S3F-F155      

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