onsemi_NTMFD1D1N02X

onsemi
NTMFD1D1N02X  
FET, MOSFET Arrays

onsemi
NTMFD1D1N02X
289-NTMFD1D1N02X
Ersa
onsemi-NTMFD1D1N02X-datasheets-5511342.pdf
MOSFET 2N-CH 25V 14A/75A 8PQFN
In Stock : 3000

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Quality Policy
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NTMFD1D1N02X Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The FET, MOSFET Arrays that the NTMFD1D1N02X belongs to can be classified under the Discrete Semiconductors. NTMFD1D1N02X is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. NTMFD1D1N02X provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. onsemi plays a crucial role in ensuring the smooth flow of goods and meeting market demand. onsemi is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, onsemi builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

V gs (V)
Configuration
Package Name
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
V gs(th) Max (V)
OPN in older Technology
Channel Mode
Product Status
Fall Time
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Number of Channels
Typical Turn-On Delay Time
Q gd Typ @ V GS = 4.5 V (nC)
Technology
REACH Status
Wide SOA Mosfets
Rds On - Drain-Source Resistance
MSL Temp (°C)
Moisture Sensitivity Level (MSL)
Status
Operating Temperature
Channel Polarity
R DS(on) Max @ V GS = 10 V (mΩ)
ECCN
V (BR)DSS Min (V)
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
MSL Type
C rss Typ (pF)
Rise Time
Current - Continuous Drain (Id) @ 25°C
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
P D Max (W)
USHTS
R DS(on) Max @ V GS = 4.5 V (mΩ)
Case Outline
I D Max (A)
C oss Typ (pF)
Gate Level
Supplier Device Package
Qg - Gate Charge
C iss Typ (pF)
Mfr
Maximum Operating Temperature
Q g Typ @ V GS = 4.5 V (nC)
RoHS Status
Q rr Typ (nC)
Mounting Style
R DS(on) Max @ V GS = 2.5 V (mΩ)
FET Feature
Vgs - Gate-Source Voltage
Silicon Family
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Power - Max
Forward Transconductance - Min
Pd - Power Dissipation
Q g Typ @ V GS = 10 V (nC)
Base Product Number

NTMFD1D1N02X Documents

Download datasheets and manufacturer documentation for NTMFD1D1N02X

Ersa NTMFDxDx/FDPC50x 27/Jan/2023      
Ersa NTMFD1D1N02X      

Shopping Guide

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