onsemi
NTTFS4C05NTAG  
Single FETs, MOSFETs

onsemi
NTTFS4C05NTAG
278-NTTFS4C05NTAG
Ersa
onsemi-NTTFS4C05NTAG-datasheets-11345440.pdf
MOSFET N-CH 30V 12A/75A 8WDFN
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    NTTFS4C05NTAG Description

    The NTTFS4C05NTAG is a type of N-channel MOSFET transistor manufactured by ON Semiconductor. Here is a description of the model, its features, and applications:

    Description:

    The NTTFS4C05NTAG is an N-channel MOSFET transistor that is designed for use in a variety of power electronic applications. It is a high voltage, high current device that is capable of handling a wide range of operating conditions.

    Features:

    • N-Channel MOSFET transistor
    • High voltage, high current device
    • Designed for use in power electronic applications
    • Suitable for use in a wide range of operating conditions

    Applications:

    The NTTFS4C05NTAG is commonly used in a variety of power electronic applications, including:

    • Power supplies
    • Motor control circuits
    • Switch mode power supplies (SMPS)
    • Inverter circuits
    • Battery management systems
    • Industrial control systems

    It is important to note that the specific applications for the NTTFS4C05NTAG will depend on the specific requirements of the system it is being used in. It is always a good idea to carefully consider the requirements of your system and to consult the datasheet and other technical documentation for the NTTFS4C05NTAG to ensure that it is the right choice for your application.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Series
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    Base Product Number
    Mounting Style
    Unit Weight
    Vgs - Gate-Source Voltage
    Id - Continuous Drain Current
    Transistor Polarity
    RoHS
    Qg - Gate Charge
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Number of Channels
    Maximum Operating Temperature
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS
    Rds On - Drain-Source Resistance

    NTTFS4C05NTAG Documents

    Download datasheets and manufacturer documentation for NTTFS4C05NTAG

    Ersa Mult Dev Wafer Chgs 26/Aug/2021      
    Ersa NTTFS4C05N      
    Ersa MPN Label Update 08/Sep/2021       MPN label update 11/Oct/2021      
    Ersa NTTFS4C05N      
    Ersa onsemi RoHS       Material Declaration NTTFS4C05NTAG      

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